Справочник MOSFET. CS3205_A8

 

CS3205_A8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: CS3205_A8

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 230 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 120 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 82 ns

Выходная емкость (Cd): 750 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm

Тип корпуса: TO220AB

Аналог (замена) для CS3205_A8

 

 

CS3205_A8 Datasheet (PDF)

1.1. cs3205 a8.pdf Size:427K _crhj

CS3205_A8
CS3205_A8

Silicon N-Channel Power MOSFET R ○ CS3205 A8 VDSS 60 V General Description: ID 120 A CS3205A8, the silicon N-channel Enhanced VDMOSFETs, PD (TC=25℃) 230 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 7 mΩ the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

3.1. cs3205 b8.pdf Size:308K _crhj

CS3205_A8
CS3205_A8

Silicon N-Channel Power MOSFET R ○ CS3205 B8 General Description: VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID 120 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 4.1. cs3205.pdf Size:66K _update_mosfet

CS3205_A8

CS5Y3205型N沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 100 W 线性降低系数 0.8 W/℃ ID (VGS=10V,TC=25℃) 18 A 极 ID (VGS=10V,TC=100℃) 18 A 限 IDM 72 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 1.25 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 55 V RDS on) VGS=10V,ID=18A 0.022 Ω ( VGS

4.2. cs3205b8.pdf Size:429K _update_mosfet

CS3205_A8
CS3205_A8

Silicon N-Channel Power MOSFET R ○ CS3205 B8 General Description: VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID 120 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 4.3. cs3205a8.pdf Size:2855K _update_mosfet

CS3205_A8
CS3205_A8

CS3025A8 60V Silicon N-Channel Power MOSFET ■ Features ■ Outline • Fast switching. TO-220AB • ESD improved capability. 0.189(4.80) 0.173(4.30) • Low gate charge. 0.409(10.50) 0.378(10.10) 0.114(1.40) • Low reverse transfer capacitances. 0.098(1.20) • 100% single pulse avalanche energy test. 0.638(16.0) 0.606(15.0) Marking code ■ Mechanical data G D S • Epoxy

Другие MOSFET... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

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