CS3N40A3H - Даташиты. Аналоги. Основные параметры
Наименование производителя: CS3N40A3H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 21 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.4 Ohm
Тип корпуса: TO251
Аналог (замена) для CS3N40A3H
CS3N40A3H Datasheet (PDF)
cs3n40a3h.pdf

Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs3n40 a3h.pdf

Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs3n40 a4h.pdf

Silicon N-Channel Power MOSFET R CS3N40 A4H General Description VDSS 400 V CS3N40 A4H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs3n40 a23.pdf

Silicon N-Channel Power MOSFET R CS3N40 A23 General Description VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
Другие MOSFET... NP32N055I , CS45N06A4 , SUD25N06-45L , CS3410B4 , CS3410BR , RSS065N06 , RSS090P03 , CS3N40A23 , P60NF06 , CS3N40A4H , CS3N50B3 , ISL9N306AS3S , CS3N50B4 , VB2703K , VB3222 , VB4290 , VB5222 .
History: TSM60NB1R4CH | 2SK981
History: TSM60NB1R4CH | 2SK981



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