NTD20N06T4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTD20N06T4
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 100 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 35 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 11 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 140 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.031 Ohm
Тип корпуса: TO252
Аналог (замена) для NTD20N06T4
NTD20N06T4 Datasheet (PDF)
ntd20n06t4.pdf
NTD20N06T4www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no
ntd20n06l ntdv20n06l.pdf
NTD20N06L, NTDV20N06LPower MOSFET20 A, 60 V, Logic Level, N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications inwww.onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Compli
ntd20n06lg.pdf
NTD20N06L, NTDV20N06LPower MOSFET20 Amps, 60 VoltsLogic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V(Note 1) AEC Q101 Qualified - NTDV20N06L These Devices are Pb-Free and are RoHS C
ntd20n06l.pdf
NTD20N06LPower MOSFET20 Amps, 60 VoltsLogic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures20 A60 V 39 mW@5.0 V(Note 1) Pb-Free Packages are AvailableTypical ApplicationsN-ChannelD Power Supplies
ntd20n06-001 ntd20n06-1g ntd20n06g.pdf
NTD20N06, NTDV20N06Power MOSFET20 Amps, 60 Volts, N-Channel DPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Features Lower RDS(on)http://onsemi.com Lower VDS(on) Lower Capacitances V(BR)DSS RDS(on) TYP ID MAX Lower Total Gate Charge60 V 37.5 mW 20 A Lower and Tighter
ntd20n06.pdf
NTD20N06Power MOSFET20 Amps, 60 Volts, N-Channel DPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Featureshttp://onsemi.com Lower RDS(on) Lower VDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower Capacitances60 V 37.5 mW 20 A Lower Total Gate Charge Lower and Tighter VSDN-Cha
ntd20n06lt4g.pdf
NTD20N06LT4Gwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
