Справочник MOSFET. CS2N65FA9

 

CS2N65FA9 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS2N65FA9
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 27 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9 nC
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 31 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для CS2N65FA9

 

 

CS2N65FA9 Datasheet (PDF)

 ..1. Size:613K  wuxi china
 cs2n65fa9.pdf

CS2N65FA9 CS2N65FA9

Silicon N-Channel Power MOSFET R CS2N65F A9 General Description VDSS 650 V CS2N65F A9, the silicon N-channel Enhanced ID 2.0 A PD (TC=25) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.1. Size:733K  wuxi china
 cs2n65fa9hy.pdf

CS2N65FA9 CS2N65FA9

Silicon N-Channel Power MOSFET R CS2N65F A9HY General Description VDSS 650 V CS2N65F A9HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.1. Size:1225K  jilin sino
 jcs2n65vb jcs2n65rb jcs2n65cb jcs2n65fb jcs2n65mb jcs2n65mfb.pdf

CS2N65FA9 CS2N65FA9

N RN-CHANNEL MOSFET JCS2N65B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V RdsonVgs=10V 5.0 -MAX Qg-typ 5.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 7.2. Size:1571K  jilin sino
 jcs2n65v jcs2n65r jcs2n65c jcs2n65f.pdf

CS2N65FA9 CS2N65FA9

N RN-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 7.3. Size:990K  jilin sino
 jcs2n65fc.pdf

CS2N65FA9 CS2N65FA9

N RN-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 7.4. Size:733K  crhj
 cs2n65f a9hy.pdf

CS2N65FA9 CS2N65FA9

Silicon N-Channel Power MOSFET R CS2N65F A9HY General Description VDSS 650 V CS2N65F A9HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.5. Size:702K  convert
 cs2n65f cs2n65d cs2n65u.pdf

CS2N65FA9 CS2N65FA9

nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N65F,CS2N65D,CS2N65U650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N65F TO-220F CS2N65F

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