P2402CAG - аналоги, параметры транзистора - Справочник транзисторов

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P2402CAG www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC

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Spec. No. C566Q8 Issued Date 2012.06.12 CYStech Electronics Corp. Revised Date Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20V MTP2402Q8 ID -8.3A RDSON@VGS=-10V, ID=-7A 22m (typ) RDSON@VGS=-4.5V,ID=-4.5A 27m (typ) RDSON@VGS=-2.5V,ID=-2A 35m (typ) Description The MTP2402Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

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P2402OV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 24m @VGS = 4.5V 20V 10A N 43m @VGS = -4.5V -20V -5.2A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 20 VDS Drain-Source Voltage P -20 V N 12 VGS Gate-Source Voltage P 12 N 10 TA = 25 C P -5.2 ID

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