CS60N04C4
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS60N04C4
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 85
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 55
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 27
ns
Cossⓘ - Выходная емкость: 280
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01
Ohm
Тип корпуса:
TO252
Аналог (замена) для CS60N04C4
CS60N04C4
Datasheet (PDF)
7.1. Size:195K crhj
cs60n04 a4.pdf 
Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V ID 60 A CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is PD(TC=25) 52 W obtained by advanced trench Technology which reduce RDS(ON)Typ 8.5 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi
7.2. Size:279K wuxi china
cs60n04a4.pdf 
Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, RDS(ON)Typ 8.5 m is obtained by advanced trench Technology which reduce the ID 60 A conduction loss, improve switching performance and enhance PD(TC=25) 52 W the avalanche energy. The transistor can be used in various 1.5 V VGS
8.1. Size:844K blue-rocket-elect
brcs60n02dp.pdf 
BRCS60N02DP Rev.A Apr.-2019 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. Halogen-free Product. / Applications
8.2. Size:688K crhj
cs60n06 c4.pdf 
Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.3. Size:687K wuxi china
cs60n06c4.pdf 
Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
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