NDT452AP-NL
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NDT452AP-NL
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.5
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 35
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.8
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 4.5
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 23
nC
trⓘ -
Время нарастания: 12
ns
Cossⓘ - Выходная емкость: 120
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05
Ohm
Тип корпуса:
SOT223
Аналог (замена) для NDT452AP-NL
NDT452AP-NL
Datasheet (PDF)
..1. Size:1612K cn vbsemi
ndt452ap-nl.pdf 
NDT452AP-NLwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Lo
6.1. Size:97K fairchild semi
ndt452ap.pdf 
June 1996 NDT452APP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT P-Channel enhancement mode power field -5A, -30V. RDS(ON) = 0.065 @ VGS = -10Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -4.5V.high cell density, DMOS technology. This very high densityprocess is especially tailored to minimiz
6.2. Size:213K onsemi
ndt452ap.pdf 
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:276K fairchild semi
ndt451an.pdf 
February 2009 NDT451ANN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10Veffect transistors are produced using Fairchild's RDS(ON) = 0.05 @ VGS = 4.5V. proprietary, high cell density, DMOS technology. This veryhigh density process is especially tailored to mini
9.2. Size:99K fairchild semi
ndt456p.pdf 
December 1998 NDT456PP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT P-Channel enhancement mode power field-7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 Veffect transistors are produced using Fairchild's RDS(ON) = 0.045 @ VGS = -4.5 V.proprietary, high cell density, DMOS technology. Thisvery high density process is especially tailo
9.3. Size:96K fairchild semi
ndt454p.pdf 
June 1996 NDT454PP-Channel Enhancement Mode Field Effect TransistorGeneral Description Features-5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10VPower SOT P-Channel enhancement mode power field effect RDS(ON) = 0.07 @ VGS = -6Vtransistors are produced using Fairchild's proprietary, high cellRDS(ON) = 0.09 @ VGS = -4.5V.density, DMOS technology. This very high density process is
9.4. Size:456K onsemi
ndt451an.pdf 
NDT451ANN-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesPower SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10Veffect transistors are produced using ON RDS(ON) = 0.05 @ VGS = 4.5V. Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially High density cell d
9.5. Size:463K onsemi
ndt454p.pdf 
NDT454PP-Channel Enhancement Mode Field Effect TransistorGeneral Description Features-5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10VPower SOT P-Channel enhancement mode power field effect RDS(ON) = 0.07 @ VGS = -6Vtransistors are produced using ON Semiconductor's RDS(ON) = 0.09 @ VGS = -4.5V.proprietary, high cell density, DMOS technology. This very high density process is e
9.6. Size:918K cn vbsemi
ndt451an.pdf 
NDT451ANwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARA
9.7. Size:849K cn vbsemi
ndt456p.pdf 
NDT456Pwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Load S
9.8. Size:850K cn vbsemi
ndt454p.pdf 
NDT454Pwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Load S
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