RQK0301FG. Аналоги и основные параметры
Наименование производителя: RQK0301FG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 220 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
Тип корпуса: SOT89
Аналог (замена) для RQK0301FG
- подборⓘ MOSFET транзистора по параметрам
RQK0301FG даташит
rqk0301fg.pdf
RQK0301FG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise
rej03g1269 rqk0301fgdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1270 rqk0302ggdqsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0306ej rqk0303mgd.pdf
Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 (Previous REJ03G1276-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. S
Другие MOSFET... SI9430DY-T1 , SI9433DY , SI9435BDY-T1-E3 , SI9435DY-T1 , CS60N04C4 , NDT452AP-NL , CS16N06AE-G , CS12N06AE-G , 2N7002 , RRQ030P03TR , RRR040P03TL , RFD16N05LSM9A , CS6N60A3D , CS6N60A3HDY , SI2306DS-T1 , SI2308DS-T1-GE3 , CS6N60A4H .
History: 2SK413 | STD4LN80K5 | 2SK443 | STD4N90K5 | NDT06N03 | STD1NK80Z | 2SK774
History: 2SK413 | STD4LN80K5 | 2SK443 | STD4N90K5 | NDT06N03 | STD1NK80Z | 2SK774
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