SUD50P04-09L-E3 - описание и поиск аналогов

SUD50P04-09L Vishay Siliconix P-Channel 40 V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( ) ID (A)d 175 C Junction Temperature 0.0094 at VGS = - 10 V - 50 Compliant to RoHS Directive 2002/95/EC - 40 0.0145 at VGS = - 4.5 V - 50 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information SUD50P04

SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (TYP.) 100 % Rg and UIS tested 0.0081 at VGS = -10 V -50 d -40 60 Material categorization 0.0117 at VGS = -4.5 V -48 d for definitions of compliance please see www.vishay.com/doc?99912 TO-252 TO APPLICATIONS

SUD50P04-08 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C,

INCHANGE Semiconductor Isc P-Channel MOSFET Transistor SUD50P04-08 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor contorl DC-DC conventers ABSOLUTE MAXIMUM RATINGS