Справочник MOSFET. CS8N80A8D

 

CS8N80A8D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS8N80A8D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 164 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.25 Ohm
   Тип корпуса: TO220AB
     - подбор MOSFET транзистора по параметрам

 

CS8N80A8D Datasheet (PDF)

 8.1. Size:232K  crhj
 cs8n80 a8h.pdf pdf_icon

CS8N80A8D

Silicon N-Channel Power MOSFET R CS8N80 A8H VDSS 800 V General Description ID 8 A CS8N80 A8H, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:228K  crhj
 cs8n80 a8d.pdf pdf_icon

CS8N80A8D

Silicon N-Channel Power MOSFET R CS8N80 A8D VDSS 800 V General Description ID 8 A CS8N80 A8D, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.0 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:232K  crhj
 cs8n80f a9h.pdf pdf_icon

CS8N80A8D

Silicon N-Channel Power MOSFET R CS8N80F A9H VDSS 800 V General Description ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.4. Size:350K  crhj
 cs8n80f a9d.pdf pdf_icon

CS8N80A8D

Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

ПОКАЗАТЬ ЕЩЁ

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