SI4558DY - аналоги, параметры транзистора - Справочник транзисторов

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Si4558DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.040 @ VGS = 10 V "6 N-Channel 30 N-Channel 30 0.060 @ VGS = 4.5 V "4.8 0.040 @ VGS = 10 V "6 P-Channel 30 P-Channel 30 0.070 @ VGS = 4.5 V "4.4 S2 SO-8 G2 S1 1 D 8 G1 2 D 7 D S2 3 D 6 G2 4 D 5 G1 Top View S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS

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SMD Type MOSFET Complementary Power Trench MOSFET SI4558DY (KI4558DY) SOP-8 Features N-Channel VDS=30V ID=6A RDS(ON) 40m (VGS = 10V) RDS(ON) 60m (VGS = 4.5V) 1.50 0.15 P-Channel VDS=-30V ID=-6A RDS(ON) 40m (VGS =-10V) 1 Source1 5 Drain RDS(ON) 70m (VGS =-4.5V) 6 Drain 2 Gate1 7 Drain 3 Source2 8 Drain 4 Gate2 D S

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Si4554DY Vishay Siliconix N- and P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.024 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 40 0.026 at VGS = 8 V 8e 6.5 Compliant to RoHS Directive 2002/95/EC 0.027 at VGS = 4.5 V 8 0.027

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Si4559ADY Vishay Siliconix N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.058 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.072 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.120 at VGS = - 10 V - 3.9 APPLICATIONS P-Channel - 60 8 nC 0.150