SIA517DJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIA517DJ
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 5.6 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.029(0.061) Ohm
Тип корпуса: DFN2X2-6L
SIA517DJ Datasheet (PDF)
sia517dj.pdf
New ProductSiA517DJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.029 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs0.034 at VGS = 2.5 V 4.5aN-Channel 12 5.6 nC New Thermally Enhanced PowerPAK 0.044 at VGS = 1.8 V 4.5aSC-70 Packag
sia517dj.pdf
SMD Type MOSFETComplementary Trench MOSFETSIA517DJ (KIA517DJ)DFN2X2-6L FeaturesN-Channel VDS (V) = 12V ID = 4.5 A (VGS = 4.5V)1S1 RDS(ON) 29m (VGS = 4.5V)2G1 RDS(ON) 34m (VGS = 2.5V)3D1D2 RDS(ON) 44m (VGS = 1.8V)D1D26 RDS(ON) 65m (VGS = 1.5V) G252.05 mm2.05 mm S2P-Channel4 VDS (V) = -12V
sia517.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN- and P-Channel 12-V (D-S) MOSFETSiA517N- and P-Channel 12-V (D-S) MOSFETDFN2X2-6LPRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.)1S10.029 at VGS = 4.5 V 4.5a2G10.034 at VGS = 2.5 V 4.5a3D1N-Channel 12 5.6 nCD20.044 at VGS = 1.8 V 4.5aD1 D260.065 at VGS = 1.5 V 4.5aG252.05 mm0.061 at V
sia513dj.pdf
New ProductSiA513DJVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.060 at VGS = 4.5 V 4.5aN-Channel 20 3.5 nC New Thermally Enhanced PowerPAK RoHS0.092 at VGS = 2.5 V 4.5aCOMPLIANTSC-70 Package0.110 at VGS = - 4.5 V - 4.5a- Small Footprint
sia519edj.pdf
New ProductSiA519EDJVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.040 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETsN-Channel 20 3.7 nC0.065 at VGS = 2.5 V 4.5a Typical ESD Protection: N-Channel 2000 V0.090 at VGS = - 4.5 V - 4.5a P-C
sia511dj.pdf
New ProductSiA511DJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.040 at VGS = 4.5 V 4.5a New Thermally Enhanced PowerPAK RoHSN-Channel 12 0.048 at VGS = 2.5 V 4.5a 4.5 nCCOMPLIANTSC-70 Package0.063 at VGS = 1.8 V 4.5a - Small Footprint Area
sia519ed.pdf
New ProductSiA519EDJVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.040 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETsN-Channel 20 3.7 nC0.065 at VGS = 2.5 V 4.5a Typical ESD Protection: N-Channel 2000 V0.090 at VGS = - 4.5 V - 4.5a P-C
sia519.pdf
Shenzhen Tuofeng Semiconductor Technology Co., LtdSiA519N- and P-Channel 20-V (D-S) MOSFETPRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.)0.040 at VGS = 4.5 V 4.2N-Channel 20 3.7 nC0.065 at VGS = 2.5 V 3.30.090 at VGS = - 4.5 V - 2.9P-Channel - 20 5.3 nC0.137 at VGS = - 2.5 V - 2.3D1 S21S12G13D1D2G1D1G2D26G252.05 mm2.05 mm S2
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918