2SJ130S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ130S
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 20 W
Предельно допустимое напряжение сток-исток |Uds|: 300 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Минимальное напряжение отсечки |Vgs(off)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 1 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 3 nC
Время нарастания (tr): 25 ns
Выходная емкость (Cd): 65 pf
Сопротивление сток-исток открытого транзистора (Rds): 8.5 Ohm
Тип корпуса: TO252
2SJ130S Datasheet (PDF)
2sj130s.pdf
SMD Type MOSFETP-Channel MOSFET2SJ130STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-300V ID =-1 A (VGS =-10V)0.127+0.10.80-0.1 RDS(ON) 8.5 (VGS =-10V) D max High speed switching Low drive currentG+ 0.12.3 0.60- 0.1 1 Gate+0.154.60 -0.15 2 Drain3 Source4 DrainS Ab
2sj130.pdf
2SJ130(L), 2SJ130(S) Silicon P Channel MOS FET REJ03G0846-0200 (Previous: ADE-208-1181) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline RENESAS Package co
2sj132-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj133-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj133.pdf
DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ133, 2SJ133-ZP-CHANNEL POWER MOS FETFOR SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Gate drive available at logic level (VGS = 4 V) High current control available in smalldimension due to low RDS(on) ( 0.45 ) 2SJ133-Z is a lead process product and is dealfor mounting a hybrid IC.QUALITY GRADES Standard
2sj132.pdf
DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ132, 2SJ132-ZP-CHANNEL POWER MOS FETFOR SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Gate drive available at logic level (VGS = -4 V) High current control available in smalldimension due to low RDS(on) ( 0.25 ) 2SJ132-Z is a lead process product and is dealfor mounting a hybrid IC.QUALITY GRADES StandardP
2sj139.pdf
isc P-Channel MOSFET Transistor 2SJ139FEATURESDrain Current : I =-10@ T =25D CDrain Source Voltage-: V = -100(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)@V = -10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDC-DC converter, power switch.ABSOLUTE MAXIMUM RATINGS(T
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