AO3415W datasheet, подбор замены

 ..1. Size:1656K  kexin
 ao3415w.pdf 

SMD Type MOSFET P-Channel MOSFET (KO3415W) AO3415W Features VDS (V) =-20V ID =-4A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) RDS(ON) 60m (VGS =-2.5V) RDS(ON) 75m (VGS =-1.8V) 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 Conti

 8.1. Size:283K  aosemi
 ao3415.pdf 

AO3415 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -4A voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V)

 8.2. Size:319K  aosemi
 ao3415a.pdf 

AO3415A 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -5A with gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)

 8.3. Size:378K  aosemi
 ao3415c.pdf 

AO3415C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.5A Low Gate Charge RDS(ON) (at VGS=-4.5V)

 8.4. Size:1085K  shenzhen
 ao3415.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3415 Rev 3 May 2004 AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -4 A operation with gate voltages as low as 1.8V. This RDS(ON)

 8.5. Size:1982K  kexin
 ao3415.pdf 

SMD Type MOSFET P-Channel MOSFET AO3415 (KO3415) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V) 1 2 +0.1 0.95-0.1 0.1+0.05 RDS(ON) 55m (VGS =-2.5V) -0.01 +0.1 1.9-0.1 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V) 1. Gate 2. Source D 3. Drain

 8.6. Size:1729K  kexin
 ao3415a.pdf 

SMD Type MOSFET P-Channel MOSFET AO3415A (KO3415A) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V) 1 2 +0.1 0.95-0.1 0.1+0.05 RDS(ON) 55m (VGS =-2.5V) -0.01 +0.1 1.9-0.1 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V) 1. Gate 2. Source D 3. Dra

 8.7. Size:1998K  kexin
 ao3415 ko3415.pdf 

SMD Type MOSFET P-Channel MOSFET AO3415 (KO3415) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V) 1 2 RDS(ON) 55m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V) 1. Gate D 2. Source 3

 8.8. Size:1662K  kexin
 ao3415as.pdf 

SMD Type MOSFET P-Channel MOSFET AO3415AS (KO3415AS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-20V ID =-4A (VGS =-4.5V) RDS(ON) 45m (VGS =-4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 D RDS(ON) 54m (VGS =-2.5V) +0.1 1.9 -0.2 RDS(ON) 75m (VGS =-1.8V) ESD Rating 3000V HBM G 1. Gate 2. Source 3. Dra

 8.9. Size:1998K  kexin
 ao3415-3.pdf 

SMD Type MOSFET P-Channel MOSFET AO3415 (KO3415) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V) 1 2 RDS(ON) 55m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V) 1. Gate D 2. Source 3

 8.10. Size:1694K  kexin
 ao3415a-3.pdf 

SMD Type MOSFET P-Channel MOSFET AO3415A (KO3415A) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-5 A (VGS =-4.5V) 1 2 RDS(ON) 43m (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 55m (VGS =-2.5V) RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V) 1. Gate 2. Source

 8.11. Size:459K  umw-ic
 ao3415a.pdf 

R UMW UMW AO3415A SOT-23 Plastic-Encapsulate MOSFETS UMW AO3415A P-Channel 20-V(D-S) MOSFET SOT-23 ID V(BR)DSS RDS(on)MAX 50m @-4.5V -20V 60m @-2.5V -4A 1. GATE 73m @-1.8V 2. SOURCE 3. DRAIN APPLICATION FEATURE Load switch and in PWM applicatopns Excellent RDS(ON), low gate charge,low gate voltages MARKING Equivalent Circuit D G AFHV S Maximum ratings

 8.12. Size:372K  guangdong hottech
 ao3415.pdf 

Plastic-Encapsulate Mosfets AO3415 FEATURES P-Channel MOSFET The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. D 1.Gate 2.Source SOT-23 3.Drain G S Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Maxim

 8.13. Size:1018K  huashuo
 ao3415.pdf 

AO3415 P-Ch 20V Fast Switching MOSFETs Description Product Summary The AO3415 is the high cell density trenched P-ch VDS -20 V MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.3 A The AO3415 meet the RoHS and Green Product requirement with full function reliability approved. Super L

 8.14. Size:1668K  mdd
 ao3415.pdf 

AO3415 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 20V P-Channel MOSFET 3 ID Max V(BR)DSS RDS(on)Typ 37m @ -4.5V 1. GATE -4.8A -20V 2. SOURCE 43m @ -3.3V 1 3. DRAIN 2 APPLICATION FEATURE Load switch and in PWM applicatopns Excellent RDS(ON), low gate charge,low gate voltages MARKING Equivalent circuit D 3415 G S PACKAGE SPECIFICATIONS Reel DI

 8.15. Size:298K  msksemi
 ao3415ai-ms.pdf 

www.msksemi.com AO3415AI-MS Semiconductor Compiance D VDS -20V I (at V =-4.5V) -4A D GS R (at V = -4.5V)

 8.16. Size:607K  cn puolop
 ao3415.pdf 

AO3415 -20V P-Channel Enhancement Mode MOSFET General Features Description VDS = -20V,ID =-4A The AO3415 uses advanced trench technology to provide RDS(ON)

 8.17. Size:1172K  cn alj
 ao3415.pdf 

SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate Mosfets AO3415 20V P-Channel Mosfet Features V = -20V DS I = 3A (V = -4V) D GS R

 8.18. Size:868K  cn vbsemi
 ao3415a.pdf 

 8.19. Size:1556K  cn tech public
 ao3415a.pdf