IRF646 - описание и поиск аналогов

IRF646 Data Sheet June 1999 File Number 2169.3 14A, 275V, 0.280 Ohm, N-Channel Power Features MOSFET 14A, 275V This N-Channel enhancement mode silicon gate power field rDS(ON) = 0.280 effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

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PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.15 Ease of Paralleling G Simple Drive Requirements Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processi

PD - 94930 IRF640PbF Lead-Free 1/8/04 Document Number 91036 www.vishay.com 1 IRF640PbF Document Number 91036 www.vishay.com 2 IRF640PbF Document Number 91036 www.vishay.com 3 IRF640PbF Document Number 91036 www.vishay.com 4 IRF640PbF Document Number 91036 www.vishay.com 5 IRF640PbF Document Number 91036 www.vishay.com 6 IRF640PbF TO-220AB Package Outline D

PD - 95046A IRF640NPbF IRF640NSPbF l Advanced Process Technology IRF640NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.15 G l Lead-Free Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectif

PD - 95046A IRF640NPbF IRF640NSPbF l Advanced Process Technology IRF640NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.15 G l Lead-Free Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectif

PD - 95116 IRF644SPbF Lead-Free 3/16/04 Document Number 91040 www.vishay.com 1 IRF644SPbF Document Number 91040 www.vishay.com 2 IRF644SPbF Document Number 91040 www.vishay.com 3 IRF644SPbF Document Number 91040 www.vishay.com 4 IRF644SPbF Document Number 91040 www.vishay.com 5 IRF644SPbF Document Number 91040 www.vishay.com 6 IRF644SPbF D2Pak Package Outli

PD -90902B IRF640S/L HEXFET Power MOSFET Surface Mount (IRF640S) D Low-profile through-hole (IRF640L) VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating RDS(on) = 0.18 150 C Operating Temperature G Fast Switching ID = 18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier provide the designer with the best co

PD - 94871 IRF644PbF Lead-Free 12/5/03 Document Number 91039 www.vishay.com 1 IRF644PbF Document Number 91039 www.vishay.com 2 IRF644PbF Document Number 91039 www.vishay.com 3 IRF644PbF Document Number 91039 www.vishay.com 4 IRF644PbF Document Number 91039 www.vishay.com 5 IRF644PbF Document Number 91039 www.vishay.com 6 IRF644PbF TO-220AB Package Outline

PD - 94859 IRF644NPbF IRF644NS l Advanced Process Technology IRF644NL l Dynamic dv/dt Rating l 175 C Operating Temperature HEXFET Power MOSFET l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB RDS(on) = 240m version is currently available in a G lead-free configuration) Description ID =

PD - 95113 IRF640S/LPbF Lead-Free 3/16/04 Document Number 91037 www.vishay.com 1 IRF640S/LPbF Document Number 91037 www.vishay.com 2 IRF640S/LPbF Document Number 91037 www.vishay.com 3 IRF640S/LPbF Document Number 91037 www.vishay.com 4 IRF640S/LPbF Document Number 91037 www.vishay.com 5 IRF640S/LPbF Document Number 91037 www.vishay.com 6 IRF640S/LPbF Docum

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 A g RDS(ON) 180 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technolog

IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V

IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF640 200 V

IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V

IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF640 200 V

December 2013 IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 m Description Features These N-Channel enhancement mode power field effect 14 A, 250 V, RDS(on) = 280 m @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (Typ. 47 nC) planar, DMOS technology. This advanced technology has Low Crss (Typ. 30 pF) been especially tailored to mi

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power Features MOSFETs 18A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.180 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.214 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Fast Switching Qg (Max.) (nC) 68 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 35 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES

IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.18 Low-Profile Through-Hole Qg (Max.) (nC) 70 Available in Tape and Reel Qgs (nC) 13 Dynamic dV/dt Rating 150 C Operating Temperature Qgd (nC) 39 Fast Swi

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 V Available Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.240 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 54 Fast Switching Qgs (nC) 9.2 Fully Avalanche Rated Ease of Paralleling Qgd

IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt Rating Qgs (nC) 11 Repetitive Avalanche Rated Fast Switching Qgd (nC) 35 Ease of Paralleling Configuration Sing

IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Fast Switching Qg (Max.) (nC) 68 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 35 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES

IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.18 RoHS* Fast Switching Qg (Max.) (nC) 70 COMPLIANT Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESC

IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt Rating Qgs (nC) 11 Repetitive Avalanche Rated Fast Switching Qgd (nC) 35 Ease of Paralleling Configuration Sing

IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.18 RoHS* Fast Switching Qg (Max.) (nC) 70 COMPLIANT Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESC

IRF640, IRF641, IRF642, S E M I C O N D U C T O R IRF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22 MOSFETs designed, tested, and guar

IRF640 N-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 18 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 200 VOLTAGE 1 GATE Features 2 *Super High Dense Cell Design For Low RDS(ON) SOURCE RDS(ON)

IRF640 Rev.G Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

RoHS IRF640 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) DESCRIPTION The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. D D They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and relia

IRF640 N-Channel MOSFET Transistor FEATURES Static drain-source on-resistance TO-220 RDS(on) 150m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )

IRF640N N-Ch 200V Fast Switching MOSFETs Product Summary Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 200V 170m 18A technology Description TO220 Pin Configuration The IRF640N is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excel

IRF640P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.110 at VGS = 10 V 2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Primary Side Switch D DRAIN connected to TAB G G D S Top View S N-Chan

Silicon N-Channel Power MOSFET Description IRF640NS, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Schematic diagram V =200V,I =18A

isc N-Channel MOSFET Transistor IRF640N IIRF640N FEATURES Static drain-source on-resistance RDS(on) 150m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T

Isc N-Channel MOSFET Transistor IRF640NS FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION Drain Current ID= 18A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.18 (Max) Fast Switching Speed Low Drive Requirement APPLICATIONS Designed for low voltage, high speed power switching applications suc

Isc N-Channel MOSFET Transistor IRF640NL FEATURES With TO-262 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR