IRF646Data Sheet June 1999 File Number 2169.314A, 275V, 0.280 Ohm, N-Channel Power FeaturesMOSFET 14A, 275VThis N-Channel enhancement mode silicon gate power field rDS(ON) = 0.280effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Ratedtested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mode

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PD - 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processi

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PD -90902BIRF640S/LHEXFET Power MOSFET Surface Mount (IRF640S)D Low-profile through-hole (IRF640L)VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt RatingRDS(on) = 0.18 150C Operating TemperatureG Fast SwitchingID = 18A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifier providethe designer with the best co

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PD - 94859IRF644NPbFIRF644NSl Advanced Process TechnologyIRF644NLl Dynamic dv/dt Ratingl 175C Operating Temperature HEXFET Power MOSFETl Fast SwitchingDl Fully Avalanche RatedVDSS = 250Vl Ease of Parallelingl Simple Drive Requirementsl Lead-Free (only the TO-220ABRDS(on) = 240mversion is currently available in aGlead-free configuration)Description ID =

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Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 AgRDS(ON) 180 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench technolog

IRF640IRF640FPN-channel 200V - 0.15 - 18A TO-220/TO-220FPMesh overlay Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF640 200V

IRF640IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF640 200 V

IRF640IRF640FPN-channel 200V - 0.15 - 18A TO-220/TO-220FPMesh overlay Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF640 200V

IRF640IRF640FP N - CHANNEL 200V - 0.150 - 18A - TO-220/FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF640 200 V

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to

November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to

December 2013IRF644BN-Channel BFET MOSFET250 V, 14 A, 280 mDescription FeaturesThese N-Channel enhancement mode power field effect 14 A, 250 V, RDS(on) = 280 m @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (Typ. 47 nC)planar, DMOS technology. This advanced technology has Low Crss (Typ. 30 pF)been especially tailored to mi

IRF640, RF1S640, RF1S640SMData Sheet January 200218A, 200V, 0.180 Ohm, N-Channel Power FeaturesMOSFETs 18A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.180power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

IRF644, SiHF644Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Fast SwitchingQg (Max.) (nC) 68 COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 35 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

IRF640S, IRF640L, SiHF640S, SiHF640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.18 Low-Profile Through-HoleQg (Max.) (nC) 70 Available in Tape and ReelQgs (nC) 13 Dynamic dV/dt Rating 150 C Operating TemperatureQgd (nC) 39 Fast Swi

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 VAvailable Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.240RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 54 Fast SwitchingQgs (nC) 9.2 Fully Avalanche Rated Ease of ParallelingQgd

IRF644S, SiHF644SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 35 Ease of ParallelingConfiguration Sing

IRF644, SiHF644Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Fast SwitchingQg (Max.) (nC) 68 COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 35 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

IRF640, SiHF640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Fast SwitchingQg (Max.) (nC) 70 COMPLIANT Ease of ParallelingQgs (nC) 13Qgd (nC) 39 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESC

IRF640S, SiHF640S, SiHF640Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Low-profile through-holeRDS(on) ()VGS = 10 V 0.18 Available in tape and reelAvailableQg max. (nC) 70 Dynamic dV/dt ratingQgs (nC) 13 150 C operating temperature AvailableQgd (nC) 39 Fast switchingConfiguration Single

IRF644S, SiHF644SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 35 Ease of ParallelingConfiguration Sing

IRF640, SiHF640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Fast SwitchingQg (Max.) (nC) 70 COMPLIANT Ease of ParallelingQgs (nC) 13Qgd (nC) 39 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESC

IRF640, IRF641, IRF642,S E M I C O N D U C T O RIRF643, RF1S640, RF1S640SM16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm,N-Channel Power MOSFETsJanuary 1998Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22MOSFETs designed, tested, and guar

IRF640N-Channel EnhancementDRAIN CURRENTMode POWER MOSFET 18 AMPERES3 DRAINDRAIN SOURCE VOLTAGEP b Lead(Pb)-Free200 VOLTAGE1 GATEFeatures:2*Super High Dense Cell Design For Low RDS(ON)SOURCERDS(ON)

IRF640 Rev.G Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

RoHS IRF640 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(18A, 200Volts)DESCRIPTION The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.DD They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and relia

IRF640N-Channel MOSFET TransistorFEATURESStatic drain-source on-resistance:TO-220RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

IRF640NN-Ch 200V Fast Switching MOSFETs Product Summary Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 200V 170m 18A technology Description TO220 Pin Configuration The IRF640N is the highest performance trenchN-ch MOSFETs with extreme high cell density,which provide excel

IRF640Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.110 at VGS = 10 V2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Primary Side SwitchDDRAIN connected to TAB GG D S Top ViewSN-Chan

isc N-Channel MOSFET Transistor IRF640NIIRF640NFEATURESStatic drain-source on-resistance:RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION Drain Current ID= 18A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS Designed for low voltage, high speed power switching applications suc

Isc N-Channel MOSFET Transistor IRF640NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR