FR9024N datasheet, подбор замены

 ..1. Size:1977K  kexin
 fr9024n.pdf 

SMD Type MOSFET P-Channel MOSFET FR9024N (KFR9024N) TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 VDS (V) =-55V 4 ID =-11 A (VGS =-10V) RDS(ON) 175m (VGS =-10V) 0.127 +0.1 0.80-0.1 max Fast Switching Fully Avalanche Rated + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 2 Drain 3 Source D 4 Drain

 0.1. Size:1347K  1
 irfr9024ncpbf irfu9024ncpbf.pdf 

PD - 96048 IRFR9024NCPbF IRFU9024NCPbF (IRFR9024NCPbF) (IRFU9024NCPbF) Lead-Free www.irf.com 1 05/31/06 IRFR/U9024NCPbF 2 www.irf.com IRFR/U9024NCPbF www.irf.com 3 IRFR/U9024NCPbF 4 www.irf.com IRFR/U9024NCPbF www.irf.com 5 IRFR/U9024NCPbF 6 www.irf.com IRFR/U9024NCPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductanc

 0.2. Size:1384K  international rectifier
 irfr9024npbf irfu9024npbf.pdf 

PD - 95015A IRFR9024NPbF IRFU9024NPbF Lead-Free www.irf.com 1 12/14/04 IRFR/U9024NPbF 2 www.irf.com IRFR/U9024NPbF www.irf.com 3 IRFR/U9024NPbF 4 www.irf.com IRFR/U9024NPbF www.irf.com 5 IRFR/U9024NPbF 6 www.irf.com IRFR/U9024NPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage In

 0.3. Size:117K  international rectifier
 irfr9024n.pdf 

PD - 9.1506 IRFR/U9024N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -55V Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) RDS(on) = 0.175 Advanced Process Technology G Fast Switching ID = -11A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 0.4. Size:529K  infineon
 auirfr9024n auirfu9024n.pdf 

AUIRFR9024N AUTOMOTIVE GRADE AUIRFU9024N Features HEXFET Power MOSFET Advanced Planar Technology VDSS -55V Low On-Resistance P-Channel RDS(on) max. 0.175 Dynamic dv/dt Rating ID -11A 150 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Complian

 0.5. Size:870K  cn vbsemi
 irfr9024ntrpbf.pdf 

IRFR9024NTRPBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Paramete