Si2315BDSVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs: 1.8 V Rated 0.050 at VGS = - 4.5 V - 3.85Available0.065 at VGS = - 2.5 V - 12 - 3.4RoHS*COMPLIANT0.100 at VGS = - 1.8V - 2.7TO-236(SOT-23)G 13 DS 2Top ViewSi2315BDS *(M5)*

SMD Type MOSFETP-Channel Enhancement MOSFET SI2315BDS (KI2315BDS)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 VDS (V) =-12V 3 ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) RDS(ON) 65m (VGS =-2.5V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V)+0.11.9-0.1G 11.Gate3 D2.SourceS 23.Drain A

isc P-Channel MOSFET Transistor Si2315BDSFEATURESStatic drain-source on-resistance:R 52m@V = -4.5V; I = -3.8ADS(on) GS DEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applications

SMD Type MOSFETP-Channel Enhancement MOSFET SI2315BDS (KI2315BDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-12V ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V)1 2 RDS(ON) 65m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 100m (VGS =-1.8V)G 13 D1. GateS 22. Source3. D

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2315G 13 DS 2DescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremelylow on-resistance per silicon area. This benefit, combinedwith the fast switching speed and ruggedized device designthat power MOSFETs are well known for, providesthe designer with an ext

Si2319CDSVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.077 at VGS = - 10 V - 4.4- 40 7 nC 100 % Rg Tested0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC

New ProductSi2318CDSVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.042 at VGS = 10 V TrenchFET Power MOSFET5.640 2.9 nC 100 % Rg Tested0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converte

Si2319CDSVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.077 at VGS = - 10 V - 4.4- 40 7 nC 100 % Rg Tested0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC

Si2316BDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ) Definition TrenchFET Power MOSFET0.050 at VGS = 10 V 4.530 3.16 nC PWM Optimized0.080 at VGS = 4.5 V 3.4 100 % Rg tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Battery Switch

New ProductSi2312CDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.0318 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.0356 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.0414 at VGS = 1.8 V 5.6APPLI

Si2319DSVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)bAvailable0.082 at VGS = - 10 V TrenchFET Power MOSFET - 3.0- 400.130 at VGS = - 4.5 V - 2.4APPLICATIONS Load SwitchTO-236(SOT-23)G 13 DS 2Top ViewSi2319DS (C9)**Marking CodeOrdering Informati

Si2316BDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ) Definition TrenchFET Power MOSFET0.050 at VGS = 10 V 4.530 3.16 nC PWM Optimized0.080 at VGS = 4.5 V 3.4 100 % Rg tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Battery Switch

Si2314EDSVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.033 at VGS = 4.5 V 4.9 TrenchFET Power MOSFET0.040 at VGS = 2.5 V 20 4.4 ESD Protected: 3000 V0.051 at VGS = 1.8 V 3.9APPLICATIONS LI-lon Battery ProtectionTO-236D(SOT-23)G 13 D3

Si2312BDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.031 at VGS = 4.5 V 5.0 TrenchFET Power MOSFET20 0.037 at VGS = 2.5 V 4.6 7.5 100 % Rg Tested0.047 at VGS = 1.8 V 4.1 Compliant to RoHS Directive 2002/95/ECTO-236(SOT-23)G 13 DS 2

Si2318DSVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.045 at VGS = 10 V 3.9 TrenchFET Power MOSFET400.058 at VGS = 4.5 V 3.5APPLICATIONS Stepper Motors Load SwitchTO-236(SOT-23)G 13 DS 2Top ViewSi2318DS( C8)**Marking CodeOrdering

Si2314EDSVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D ESD Protected: 3000 VD RoHS Compliant Pb-free0.033 @ VGS = 4.5 V 4.9AvailableAPPLICATIONS0.040 @ VGS = 2.5 V 4.4200.051 @ VGS = 1.8 V 3.9D LI-lon Battery ProtectionDTO-236(SOT-23)G 13 D3 kWGS 2Top ViewSi2314EDS (C4)*S

New ProductSi2318CDSVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.042 at VGS = 10 V TrenchFET Power MOSFET5.640 2.9 nC 100 % Rg Tested0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converte

Si2316DSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFET0.050 at VGS = 10 V 3.4Available300.085 at VGS = 4.5 V 2.6RoHS*APPLICATIONSCOMPLIANT Battery SwitchTO-236(SOT-23)G 13 DS 2Top ViewSi2316DS (C6)** Marking CodeOrdering I

Si2311DSVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFET 0.045 at VGS = - 4.5 V - 3.5RoHS0.072 at VGS = - 2.5 V - 8 - 2.8COMPLIANTAPPLICATIONS0.120 at VGS = - 1.8 V - 2.0 Load SwitchTO-236(SOT-23)G 13 DS 2Top ViewSi2311DS (C1)** Marki

Si2312DSVishay SiliconixN-Channel 20 -V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 1.8-V RatedD RoHS CompliantVDS (V) rDS(on) (W) ID (A) Qg (Typ)Pb-free0.033 @ VGS = 4.5 V 4.9Available0.040 @ VGS = 2.5 V 4.420 11.20.051 @ VGS = 1.8 V 3.9TO-236(SOT-23)G 13 DS 2Top ViewSi2312DS (C2)**Marking CodeOrdering Information: Si2312DS-T1Si2312DS-T1E3 (Lead (Pb)-F

SI2310BFeatures Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF"Field Effect TransistorMaximum RatingsOperating Junction Temperature Range : -55C to +150

SI2310AFeatures Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free. Green Device (Note 1)Field Effect TransistorMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage

SI2312BFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-Channel MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum RatingsOperating Junction Temperature Range: -55

SI2310Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF"Field Effect TransistorMaximum Ratings Operating Junction Temperature Range : -55C to +150

SI231220V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2312PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A) Qg (Typ)0.031 @ VGS = 4.5 V 5.00.037 @ VGS = 2.5 V 4.620 7.50.047 @ VGS = 1.8 V 4.1(SOT-23)G 13 DOrdering Information: Si2312S 2Top ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 20V

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2310N-CHANNEL ENHANCEMENT MODEPOWER MOSFETSimple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m DSurface Mount Device ID 3A SSOT-23GDescription The MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance,

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2319P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)bAPPLICATIONS0.082 @ VGS = -10 V -3.0-4040D Load Switch0.130 @ VGS = -4.5 V -2.4TO-236(SOT-23)G 13 DS 2Top ViewSi2319 (C91T)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2314N-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.033 @ VGS = 4.5 V 4.90.040 @ VGS = 2.5 V 4.4200.051 @ VGS = 1.8 V 3.9(SOT-23)G 13 DS 2Top ViewSi2314 (AEXT)ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 20V

SMD Type MOSFETN-Channel MOSFETSI2318DS (KI2318DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 3.9 A (VGS = 10V)1 2 RDS(ON) 45m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 58m (VGS = 4.5V)+0.11.9 -0.21. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Paramet

SMD Type MOSFETN-Channel Enhancement MOSFET SI2312DS (KI2312DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V)1 2 RDS(ON) 40m (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 51m (VGS = 1.8V)G 13 D1. Gate2. SourceS 23. Drain

SMD Type MOSFETP-Channel Enhancement MOSFET SI2319DS (KI2319DS)SOT-23Unit: mm Features+0.12.9-0.1+0.10.4 -0.1 VDS (V) =-40V3 ID =-3.0A (VGS =-10V) RDS(ON) 82m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1G 13 D1.Gate2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Par

SMD Type MOSFETN-Channel Enhancement MOSFET SI2312 (KI2312)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V)1 2 RDS(ON) 40m (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 51m (VGS = 1.8V)G 13 D1. Gate2. SourceS 23. Drain Abs

SMD Type MOSFETN-Channel MOSFETSI2318DS (KI2318DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 3.9 A (VGS = 10V) RDS(ON) 45m (VGS = 10V)1 2+0.1+0.050.95 -0.1 RDS(ON) 58m (VGS = 4.5V) 0.1-0.01+0.11.9 -0.11. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25Parameter Sy

SMD Type MOSFETN-Channel Enhancement MOSFET SI2314EDS (KI2314EDS)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4-0.1 VDS (V) = 20V3 ID = 4.9 A (VGS = 4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V)1 2D+0.1+0.05 RDS(ON) 51m (VGS = 1.8V)0.95 -0.1 0.1 -0.01+0.11.9-0.1G 13 k1.GateG3 D2.Source3.Drai

SMD Type MOSFETN-Channel MOSFETSI2318CDS (KI2318CDS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V)1 2 RDS(ON) 51m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.1D1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol

SMD Type MOSFETP-Channel Enhancement MOSFET SI2319DS (KI2319DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-40V ID =-3.0A (VGS =-10V) RDS(ON) 82m (VGS =-10V)1 2 RDS(ON) 130m (VGS =-4.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 2 2. Source3. Drain Absolute Maximum Ratings Ta = 25

SMD Type MOSFETN-Channel MOSFETSI2318CDS (KI2318CDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V)1 2+0.02+0.10.15 -0.02 RDS(ON) 51m (VGS = 4.5V) 0.95 -0.1+0.11.9 -0.2D1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Sy

SMD Type MOSFETN-Channel Enhancement MOSFET SI2314EDS (KI2314EDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.1 Features 0.4-0.13 VDS (V) = 20V ID = 4.9 A (VGS = 4.5V) RDS(ON) 33m (VGS = 4.5V)1 2 RDS(ON) 40m (VGS = 2.5V) D+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 51m (VGS = 1.8V) +0.11.9 -0.23 kGG 11. Gate2. Source3 D3.

SMD Type MOSFETN-Channel Enhancement MOSFET SI2312DS (KI2312DS)SOT-23Unit: mm Features+0.12.9-0.1+0.10.4 -0.1 VDS (V) = 20V3 ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V)1 2 RDS(ON) 51m (VGS = 1.8V) +0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Abs

R UMW UMW SI2318ASOT-23-3L Plastic-Encapsulate MOSFETS FeaturesSOT23 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) RDS(ON) 51m (VGS = 4.5V) Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish1. GATE 2. SOURCE 3. DRAIN MARKINGEquivalent Circuit DGS Absolute Maximum Ratings Ta = 2

RUMWUMW SI2310AUMW SI2310AUMW SI2310AN-ChanneI Power MOSFET FeaturesSOT23 Simple Drive Requirement Small Package Outline Surface Mount Device1. GATE 2. SOURCE 3. DRAIN MARKING DGMS10S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitDrain-Source Voltage VD S 60 VGSGate-Source Voltage V 20 VAContinuous Drain Current

RUMWUMW SI2312AUMW SI2312A FeaturesSOT23 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V) RDS(ON) 51m (VGS = 1.8V)1. GATE MARKING 2. SOURCE 3. DRAIN G 1A12T3 DS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20V Gate

RUMW UMW SI2319 SOT-23 Plastic-Encapsulate MOSFETSSI2319 P-Channel 40-V(D-S) MOSEFETV(BR)DSS RDS(on)MAX ID45m @ - 10V- 40 V - 4.4A65m @ - 4.5VFEATURE TrenchFET Power MOSFETSOT23 Low RDS(ON) Surface Mount Package APPLICATION Load Switch for Portable Devices DC/DC Converter Battery Switch1. GATE 2. SOURCE MARKING3. DRAIN Equiva

SI2310MOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capability MAXIMUM RANTINGSParameter Symbol Ratings UnitDrain-Source Voltage VDSS 60VGate-Source Voltage VGSS 16Drain Current (Note 1) ID 3.8 APower Dissipation (N

SI2310 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V N-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 105m@10V 1. GATE 3A 60V 2. SOURCE 125m@4.5V 1 3. DRAIN 2 DESCRIPTION The SI2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery prote

SI2312 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A

SI2310 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A

SI2312CDS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

SI2312BDS-T1www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C

SI2310www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

SI2318DS-T1-GE3www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT

SI2314EDSwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conv

SI2319CDS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter

SI2319DS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter

SI2318CDS-T1-GE3www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SO

SI2312DSwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conve