SI2319DS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI2319DS
Маркировка: C9*
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 11.3 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 85 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.065 Ohm
Тип корпуса: SOT23
SI2319DS Datasheet (PDF)
si2319ds.pdf
Si2319DSVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)bAvailable0.082 at VGS = - 10 V TrenchFET Power MOSFET - 3.0- 400.130 at VGS = - 4.5 V - 2.4APPLICATIONS Load SwitchTO-236(SOT-23)G 13 DS 2Top ViewSi2319DS (C9)**Marking CodeOrdering Informati
si2319ds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2319DS (KI2319DS)SOT-23Unit: mm Features+0.12.9-0.1+0.10.4 -0.1 VDS (V) =-40V3 ID =-3.0A (VGS =-10V) RDS(ON) 82m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1G 13 D1.Gate2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Par
si2319ds-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2319DS (KI2319DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-40V ID =-3.0A (VGS =-10V) RDS(ON) 82m (VGS =-10V)1 2 RDS(ON) 130m (VGS =-4.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 2 2. Source3. Drain Absolute Maximum Ratings Ta = 25
si2319ds-t1-ge3.pdf
SI2319DS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter
si2319cd.pdf
Si2319CDSVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.077 at VGS = - 10 V - 4.4- 40 7 nC 100 % Rg Tested0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC
si2319cds.pdf
Si2319CDSVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.077 at VGS = - 10 V - 4.4- 40 7 nC 100 % Rg Tested0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC
si2319.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2319P-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)bAPPLICATIONS0.082 @ VGS = -10 V -3.0-4040D Load Switch0.130 @ VGS = -4.5 V -2.4TO-236(SOT-23)G 13 DS 2Top ViewSi2319 (C91T)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
si2319.pdf
RUMW UMW SI2319 SOT-23 Plastic-Encapsulate MOSFETSSI2319 P-Channel 40-V(D-S) MOSEFETV(BR)DSS RDS(on)MAX ID45m @ - 10V- 40 V - 4.4A65m @ - 4.5VFEATURE TrenchFET Power MOSFETSOT23 Low RDS(ON) Surface Mount Package APPLICATION Load Switch for Portable Devices DC/DC Converter Battery Switch1. GATE 2. SOURCE MARKING3. DRAIN Equiva
si2319cds-t1-ge3.pdf
SI2319CDS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter
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