2SK2869-ZJ - описание и поиск аналогов

SMD Type MOSFET N-Channel MOSFET 2SK2869-ZJ Features VDS (V) = 60V ID = 20 A (VGS = 10V) RDS(ON) 45m (VGS = 10V) RDS(ON) 70m (VGS = 4V) High speed switching D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 20 Pulsed Drain

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2869(L), 2SK2869(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1037-0200 (Previous ADE-208-570) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 0.033 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L

isc N-Channel MOSFET Transistor 2SK2869L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 45m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK2869S FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 45m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid