2SK3269-ZJ
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3269-ZJ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 25
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 285
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1
Ohm
Тип корпуса:
TO263
Аналог (замена) для 2SK3269-ZJ
2SK3269-ZJ
Datasheet (PDF)
..1. Size:941K kexin
2sk3269-zj.pdf SMD Type MOSFETN-Channel MOSFET2SK3269-ZJ Features VDS (V) = 100V ID = 25 A (VGS = 10V) RDS(ON) 100m (VGS = 10V)D Low on-resistance, Low Qg High avalanche resistanceGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100V Gate-Source Voltage VGS 20 Continuous Drain Current ID 25A Puls
7.1. Size:45K kexin
2sk3269.pdf SMD Type MOSFETN-Channel Enhacement Mode MOSFET2SK3269TO-263Unit: mm+0.2Features4.57-0.2+0.11.27-0.14.5 V drive availableLow on-state resistanceRDS(on)1 =12m MAX. (VGS =10V, ID =18 A)+0.10.1max1.27-0.1Low gate chargeQG = 30 nC TYP. (ID =35 A, VDD =16 V, VGS =10 V) +0.10.81-0.12.54Built-in gate protection diode1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.
8.1. Size:732K toshiba
2sk3265.pdf 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3265 Chopper Regulators DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.72 (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 700 V) Enhancement mode : Vth = 2.0~4.0 V (VDS
8.2. Size:171K panasonic
2sk3268.pdf This product complies with the RoHS Directive (EU 2002/95/EC).Power MOS FETs2SK3268Silicon N-channel power MOS FET Features Package Avalanche energy capability guaranteed Code High-speed switchingU-DL Low ON resistance Ron Pin Name No secondary breakdown1: Gate Low-voltage drive2: Drain High electrostatic energy capability3: Source
8.4. Size:135K fuji
2sk3262-01mr.pdf FUJI POWER MOS-FET2SK3262-01MRN-CHANNEL SILICON POWER MOS-FETTO-220F15 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators 2.54 UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25
8.5. Size:279K inchange semiconductor
2sk3265.pdf isc N-Channel MOSFET Transistor 2SK3265FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.6. Size:301K inchange semiconductor
2sk3262.pdf INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK3262FEATURESWith TO-220F packagingHigh speed switchingNo secondary breadownEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
8.7. Size:286K inchange semiconductor
2sk3268.pdf isc N-Channel MOSFET Transistor 2SK3268FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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