Справочник MOSFET. IRF720FI

 

IRF720FI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF720FI

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 35 W

Предельно допустимое напряжение сток-исток (Uds): 400 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 3 A

Максимальная температура канала (Tj): 150 °C

Выходная емкость (Cd): 450 pf

Сопротивление сток-исток открытого транзистора (Rds): 1.8 Ohm

Тип корпуса: ISOWATT220

Аналог (замена) для IRF720FI

 

 

IRF720FI Datasheet (PDF)

4.1. irf720 irf721 irf722 irf723-fi.pdf Size:476K _st

IRF720FI
IRF720FI



4.2. irf720b.pdf Size:879K _fairchild_semi

IRF720FI
IRF720FI

November 2001 IRF720B/IRFS720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to

 4.3. irf7202.pdf Size:349K _international_rectifier

IRF720FI
IRF720FI



4.4. irf7204pbf.pdf Size:243K _international_rectifier

IRF720FI
IRF720FI

PD - 95165 IRF7204PbF HEXFET® Power MOSFET l Adavanced Process Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -20V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D RDS(on) = 0.060Ω l Dynamic dv/dt Rating 4 5 G D l Fast Switching l Lead-Free ID = -5.3A Top View Description Fourth Generation HEXFETs from International Rectifier util

 4.5. irf7205pbf-1.pdf Size:273K _international_rectifier

IRF720FI
IRF720FI

IRF7205PbF-1 HEXFET® Power MOSFET A VDS -30 V 1 8 S D RDS(on) max 2 7 0.07 Ω S D (@V = -10V) GS 3 6 RDS(on) max S D 0.13 Ω (@V = -4.5V) GS 4 5 G D Qg (typical) 27 nC SO-8 ID Top View -4.6 A (@T = 25°C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturi

4.6. irf7207.pdf Size:89K _international_rectifier

IRF720FI
IRF720FI

PD - 91879A IRF7207 HEXFET® Power MOSFET Generation 5 Technology A 1 8 S D P-Channel Mosfet VDSS = -20V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D Dynamic dv/dt Rating 4 5 G D Fast Switching RDS(on) = 0.06Ω Top View Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extre

4.7. irf7204.pdf Size:145K _international_rectifier

IRF720FI
IRF720FI

PD - 9.1103B IRF7204 HEXFET® Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.060Ω Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -5.3A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced process

4.8. irf7205pbf.pdf Size:277K _international_rectifier

IRF720FI
IRF720FI

 IRF7205PbF l Adavanced Process Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET 2 7 S D l Surface Mount l Available in Tape & Reel 3 6 S D Ω l Dynamic dv/dt Rating 4 5 G D l Fast Switching l Lead-Free Top View Description

4.9. irf7201pbf.pdf Size:173K _international_rectifier

IRF720FI
IRF720FI

PD- 95022 IRF7201PbF l Generation V Technology HEXFET® Power MOSFET l Ultra Low On-Resistance A A 1 8 l N-Channel MOSFET S D VDSS = 30V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 l Fast Switching G D RDS(on) = 0.030Ω l Lead-Free Top View Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utiliz

4.10. irf7205.pdf Size:166K _international_rectifier

IRF720FI
IRF720FI

PD - 9.1104B IRF7205 HEXFET® Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -30V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.070Ω Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -4.6A Fast Switching T op View Description Fourth Generation HEXFETs from International Rectifier utilize advanced process

4.11. irf720spbf.pdf Size:1163K _international_rectifier

IRF720FI
IRF720FI

PD - 95119 IRF720SPbF • Lead-Free 3/17/04 Document Number: 91044 www.vishay.com 1 IRF720SPbF Document Number: 91044 www.vishay.com 2 IRF720SPbF Document Number: 91044 www.vishay.com 3 IRF720SPbF Document Number: 91044 www.vishay.com 4 IRF720SPbF Document Number: 91044 www.vishay.com 5 IRF720SPbF Document Number: 91044 www.vishay.com 6 IRF720SPbF D2Pak Package Outli

4.12. irf720s.pdf Size:363K _international_rectifier

IRF720FI
IRF720FI



4.13. irf7207pbf.pdf Size:150K _international_rectifier

IRF720FI
IRF720FI

PD - 95166 IRF7207PbF HEXFET® Power MOSFET l Generation 5 Technology A 1 8 S D l P-Channel Mosfet VDSS = -20V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D l Fast Switching RDS(on) = 0.06Ω l Lead-Free Top View Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techni

4.14. irf720.pdf Size:894K _international_rectifier

IRF720FI
IRF720FI

PD - 94844 IRF720PbF • Lead-Free 11/14/03 Document Number: 91043 www.vishay.com 1 IRF720PbF Document Number: 91043 www.vishay.com 2 IRF720PbF Document Number: 91043 www.vishay.com 3 IRF720PbF Document Number: 91043 www.vishay.com 4 IRF720PbF Document Number: 91043 www.vishay.com 5 IRF720PbF Document Number: 91043 www.vishay.com 6 IRF720PbF TO-220AB Package Outline

4.15. irf7201.pdf Size:182K _international_rectifier

IRF720FI
IRF720FI

PD - 91100C PRELIMINARY IRF7201 HEXFET® Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance VDSS = 30V 2 7 N-Channel MOSFET S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn

4.16. irf720a.pdf Size:926K _samsung

IRF720FI
IRF720FI

µ Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V µ Ω Lower RDS(ON) : 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

4.17. irf720lpbf sihf720l.pdf Size:176K _vishay

IRF720FI
IRF720FI

IRF720S, SiHF720S, IRF720L, SiHF720L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface mount • Available in tape and reel VDS (V) 400 • Dynamic dV/dt rating RDS(on) ()VGS = 10 V 1.8 Available • Repetitive avalanche rated Qg (Max.) (nC) 20 • Fast switching Qgs (nC) 3.3 • Ease of paralleling Available • Simple drive requirements Q

4.18. irf720 sihf720.pdf Size:201K _vishay

IRF720FI
IRF720FI

IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 V Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 1.8 RoHS* • Fast Switching Qg (Max.) (nC) 20 COMPLIANT • Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

4.19. irf720pbf sihf720.pdf Size:201K _vishay

IRF720FI
IRF720FI

IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 V Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 1.8 RoHS* • Fast Switching Qg (Max.) (nC) 20 COMPLIANT • Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

4.20. irf720spbf sihf720s.pdf Size:199K _vishay

IRF720FI
IRF720FI

IRF720S, SiHF720S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 • Surface Mount RDS(on) ()VGS = 10 V 1.8 • Available in Tape and Reel Qg (Max.) (nC) 20 • Dynamic dV/dt Rating Qgs (nC) 3.3 • Repetitive Avalanche Rated • Fast Switching Qgd (nC) 11 • Ease of Paralleling Configuration Sing

4.21. irf7205.pdf Size:1894K _kexin

IRF720FI
IRF720FI

SMD Type MOSFET P-Channel MOSFET IRF7205 (KRF7205) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-4.6 A (VGS =-10V) 1.50 0.15 ● RDS(ON) < 70mΩ (VGS =-10V) ● RDS(ON) < 130mΩ (VGS =-4.5V) 1 Source 5 Drain ● Fast Switching 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate A 1 8 S D 2 7 S D 3 6 S D 4 5 G D ■ Absolute Maximum Ratings Ta = 25℃ Parameter

Другие MOSFET... IRF712 , IRF713 , IRF720 , IRF7201 , IRF7204 , IRF7205 , IRF7207 , IRF720A , IRF8010 , IRF720S , IRF721 , IRF722 , IRF7220 , IRF723 , IRF7233 , IRF730 , IRF730A .

 

 
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