SI2372DS - описание и поиск аналогов

SMD Type MOSFET N-Channel MOSFET SI2372DS (KI2372DS) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V ID = 5.3 A (VGS = 10V) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 RDS(ON) 33m (VGS = 10V) 1.9+0.1 -0.1 RDS(ON) 38m (VGS = 6V) RDS(ON) 43m (VGS = 4.5V) 1. Gate 2. Source D 3. Drain G S Absolute Maximum Ratin

SMD Type MOSFET N-Channel MOSFET SI2372DS (KI2372DS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V ID = 5.3 A (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 33m (VGS = 10V) 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 38m (VGS = 6V) RDS(ON) 43m (VGS = 4.5V) 1. Gate 2. Source D 3. Drain G S Absolute Maximum R

Si2374DS www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) 100 % Rg tested 0.030 at VGS = 4.5 V 5.9 Material categorization 20 0.034 at VGS = 2.5 V 5.5 7.7 nC For definitions of compliance please see 0.041 at VGS = 1.8 V 5 www.vishay.com/doc?99912 APPLICATIONS

New Product Si2377EDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.061 at VGS = - 4.5 V - 4.4 TrenchFET Power MOSFET 0.080 at VGS = - 2.5 V - 3.8 100 % Rg Tested - 20 7.6 nC 0.110 at VGS = - 1.8 V - 3.3 Typical ESD Performance 2000 V B

New Product Si2377EDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.061 at VGS = - 4.5 V - 4.4 TrenchFET Power MOSFET 0.080 at VGS = - 2.5 V - 3.8 100 % Rg Tested - 20 7.6 nC 0.110 at VGS = - 1.8 V - 3.3 Typical ESD Performance 2000 V B

Si2371EDS Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg Tested Built-in ESD Protection 0.045 at VGS = - 10 V - 4.8 - Typical ESD Performance 3000 V 0.053 at VGS = - 4.5 V - 4.4 10.6 nC - 30 Material categorization 0.080 at VGS = - 2.5 V - 3.6 For definition

SMD Type MOSFET P-Channel MOSFET SI2377EDS (KI2377EDS) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features VDS (V) = -20V ID = -4.4 A 1 2 RDS(ON) 61m (VGS = -4.5V) +0.1 +0.05 0.95 -0.1 0.1-0.01 RDS(ON) 80m (VGS = -2.5V) +0.1 1.9 -0.1 RDS(ON) 110m (VGS = -1.8V) RDS(ON) 165m (VGS = -1.5V) 1. Gate 2. Source 3. Dra

SMD Type MOSFET P-Channel MOSFET SI2377EDS (KI2377EDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = -20V ID = -4.4 A 1 2 +0.02 RDS(ON) 61m (VGS = -4.5V) +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 80m (VGS = -2.5V) RDS(ON) 110m (VGS = -1.8V) RDS(ON) 165m (VGS = -1.5V) 1. Gate 2. Source 3.

Si2377EDS www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2