UTT6N10Z - аналоги, параметры транзистора - Справочник транзисторов

UTT6N10Z даташит

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SMD Type MOSFET Transistors N-Channel Power MOSFET UTT6N10Z Features Unit mm SOT-223 6.50 0.2 RDS(on) = 80m @VGS = 10V,ID=6A 3.00 0.1 High Switching Speed Low Crss (Typically 3.1pF) 4 Low Gate Charge (Typically 4.3nC) 1 2 3 2.Drain 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Gate 1.Gate 2.Drain 3.Source 4.60 (typ) 4.Drain 3.Sou

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UNISONIC TECHNOLOGIES CO., LTD UTT6N10 Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10 is an N-channel enhancement mode Power FET, it uses UTC s advanced technology to provide customers a 1 minimum on-state resistance, high switching speed and ultra low SOT-223 gate charge. The UTC UTT6N10 is usually used in DC-DC Conversion. FEATURES

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UNISONIC TECHNOLOGIES CO., LTD UTT6NP10 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION 1 SOP-8 The UTC UTT6NP10 incorporates an N-channel MOSFET and a P-channel MOSFET it uses UTC s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting. The UTC UTT6NP10 is univers

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