SM1A11NSU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SM1A11NSU
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 54 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 23 nC
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 90 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: TO252
SM1A11NSU Datasheet (PDF)
sm1a11nsu.pdf
SM1A11NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A,Drain 4 RDS(ON)= 45m (Max.) @ VGS=10V3Source2 Reliable and Rugged1Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOSFETOrderi
sm1a11nsub.pdf
SM1A11NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A, RDS(ON)= 45m (Max.) @ VGS=10VS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOS
sm1a11nsf.pdf
SM1A11NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A, RDS(ON)= 45m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant) Top View of TO-220DApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOSFET Fully Avalanche Rated.Ordering
sm1a11nsfp.pdf
SM1A11NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/20A, RDS(ON)= 45m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedDApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and
sm1a11nsk.pdf
SM1A11NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/6A, D RDS(ON)= 45m (Max.) @ VGS=10VS Reliable and RuggedSS Lead Free and Green Devices AvailableGTop View of SOP-8(RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G Power Management for Boost Converters. Synchronous Rectifiers for SMPS. LED Backlighting.S S S(1, 2, 3
sm1a11nsv.pdf
SM1A11NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/6A, RDS(ON)= 45m (Max.) @ VGS=10VG Reliable and RuggedDS Lead Free and Green Devices Available(RoHS Compliant)Top View SOT-223DApplicationsG Power Management for Boost Converters. Synchronous Rectifiers for SMPS.S LED Backlighting.N-Channel MOSFETOrdering and Marking Information
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BLS7G3135L-350P
History: BLS7G3135L-350P
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918