IRF730AS - описание и поиск аналогов

PD-93772A SMPS MOSFET IRF730AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 400V 1.0 5.5A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 400 Definition RDS(on) (Max.) ( )VGS = 10 V 1.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 22 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 5.8 Ruggedness Qgd (nC) 9.3 Fully Characteriz

PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-

PD - 94976 SMPS MOSFET IRF730APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanch

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 400 Available Requirement RDS(on) ( )VGS = 10 V 1.0 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 22 Ruggedness Qgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 9.3 Effecti

IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 400 Available Requirement RDS(on) ( )VGS = 10 V 1.0 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 22 Ruggedness Qgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 9.3 Effecti

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF730A FEATURES Drain Current I =5.5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch Mode Power Supply Uninterruptable Power Supply High speed power swi