Справочник MOSFET. IRF731

 

IRF731 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF731

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 75 W

Предельно допустимое напряжение сток-исток (Uds): 350 V

Максимально допустимый постоянный ток стока (Id): 5.5 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 1 Ohm

Тип корпуса: TO220

Аналог (замена) для IRF731

 

 

IRF731 Datasheet (PDF)

1.1. irf730 irf731 irf732 irf733-fi.pdf Size:486K _st

IRF731
IRF731



1.2. irf7317.pdf Size:156K _international_rectifier

IRF731
IRF731

PD - 9.1568B IRF7317 PRELIMINARY HEXFET® Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 20V -20V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.029Ω 0.058Ω Description Top View Fifth Generation HEXFETs from International Rectifier ut

 1.3. irf7311.pdf Size:209K _international_rectifier

IRF731
IRF731

PD - 91435C IRF7311 HEXFET® Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 20V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

1.4. irf7314q.pdf Size:148K _international_rectifier

IRF731
IRF731

PD -93945A IRF7314Q HEXFET® Power MOSFET Typical Applications VDSS RDS(on) max ID • Anti-lock Braking Systems (ABS) -20V 0.058@VGS = -4.5V -5.2A • Electronic Fuel Injection 0.098@VGS = -2.7V -4.42A • Air bag Benefits • Advanced Process Technology • Dual P-Channel MOSFET 1 8 S1 D1 • Ultra Low On-Resistance 2 7 G1 D1 • 175°C Operating Temperature 3 6 S2 D2

 1.5. irf7313.pdf Size:105K _international_rectifier

IRF731
IRF731

PD - 9.1480A IRF7313 PRELIMINARY HEXFET® Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029Ω T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

1.6. irf7313qpbf.pdf Size:218K _international_rectifier

IRF731
IRF731

PD - 96125A IRF7313QPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 l Dual N- Channel MOSFET S1 D1 VDSS = 30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150°C Operating Temperature l Lead-Free 4 5 G2 D2 RDS(on) = 0.029Ω Description Top View These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastes

1.7. irf7316pbf-1.pdf Size:203K _international_rectifier

IRF731
IRF731

IRF7316TRPbF-1 HEXFET® Power MOSFET VDS -30 V 1 8 S1 D1 RDS(on) max 0.058 Ω 2 7 G1 D1 (@V = -10V) GS Qg (typical) 23 nC 3 6 S2 D2 ID 4 5 -4.9 A G2 D2 (@T = 25°C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free En

1.8. irf7316s.pdf Size:103K _international_rectifier

IRF731
IRF731

PD - 9.1505A IRF7316 PRELIMINARY HEXFET® Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058Ω T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

1.9. irf7319.pdf Size:137K _international_rectifier

IRF731
IRF731

PD - 9.1606A IRF7319 PRELIMINARY HEXFET® Power MOSFET Generation V Technology N-CHANNEL MOSFE T N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-C H ANN EL MO SFE T RDS(on) 0.029Ω 0.058Ω Top View Description Fifth Generation HEXFETs from International Rectifi

1.10. irf7316.pdf Size:103K _international_rectifier

IRF731
IRF731

PD - 9.1505A IRF7316 PRELIMINARY HEXFET® Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058Ω T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

1.11. irf7313pbf-1.pdf Size:204K _international_rectifier

IRF731
IRF731

IRF7313PbF-1 HEXFET® Power MOSFET VDS 30 V 1 8 S1 D1 RDS(on) max 2 7 G1 D1 0.029 Ω (@V = 10V) GS 3 6 S2 D2 Qg (typical) 22 nC 4 5 G2 D2 ID 6.5 A SO-8 (@T = 25°C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Enviro

1.12. irf7314.pdf Size:147K _international_rectifier

IRF731
IRF731

PD - 9.1436B IRF7314 PRELIMINARY HEXFET® Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -20V 2 7 Dual P-Channel MOSFET G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058Ω Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

1.13. auirf7313q.pdf Size:239K _international_rectifier

IRF731
IRF731

PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET® Power MOSFET Features l Advanced Planar Technology l Dual N Channel MOSFET V(BR)DSS 30V 1 8 S1 D1 l Low On-Resistance 2 7 G1 D1 l Dynamic dV/dT Rating RDS(on) typ. 23mΩ 3 6 S2 D2 l 175°C Operating Temperature max. 29mΩ 4 5 l Fast Switching G2 D2 l Lead-Free, RoHS Compliant ID 6.9A Top View l Automotive Qualified* Des

1.14. irf7316qpbf.pdf Size:215K _international_rectifier

IRF731
IRF731

PD - 96126A IRF7316QPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P- Channel MOSFET VDSS = -30V 2 7 l Surface Mount G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150°C Operating Temperature 4 5 G2 D2 l Lead-Free RDS(on) = 0.058Ω Top View Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the laste

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