IRF731 - параметры транзистора MOSFET, его аналоги, datasheet

IRF731 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRF731
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 74 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 350 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 35(max) nC
   tr ⓘ - Время нарастания: 35(max) ns
   Cossⓘ - Выходная емкость: 300(max) pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TO220

Аналог (замена) для IRF731

- подбор ⓘ MOSFET транзистора по параметрам

IRF731 Datasheet (PDF)

..1. Size:486K st
irf730 irf731 irf732 irf733-fi.pdf pdf_icon

0.1. Size:365K 1
auirf7319q.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7319Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1VDSS 30V -30V Low On-Resistance 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.023 0.0423 6S2 D2 Dual N and P Channel MOSFET max. 0.029 0.05845G2 D2 Surface Mount P-CHANNEL MOSFETID 6.5A -4.9A Fully Avalanch

0.2. Size:298K 1
irf7313q.pdf pdf_icon

PD - 96125IRF7313QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = 30Vl Dual N- Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reel4l 150C Operating Temperature 5G2 D2RDS(on) = 0.029l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl

0.3. Size:235K 1
irf7316qpbf.pdf pdf_icon

PD - 96126IRF7316QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-Resistance S1 D1VDSS = -30Vl Dual P- Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reell 150C Operating Temperature 4 5G2 D2RDS(on) = 0.058l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appli

0.4. Size:256K 1
auirf7316q.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7316Q VDSS Features 1 8S1 D1 -30V Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0423 6 Low On-Resistance S2 D24 5 Logic Level Gate Drive D2 max. G20.058 Dual P Channel MOSFET Top ViewID -4.9A Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Complian

0.5. Size:105K international rectifier
irf7313.pdf pdf_icon

PD - 9.1480AIRF7313PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = 30V Dual N-Channel MOSFET2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.029T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

0.6. Size:218K international rectifier
irf7313qpbf.pdf pdf_icon

PD - 96125AIRF7313QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8l Dual N- Channel MOSFETS1 D1VDSS = 30Vl Surface Mount2 7G1 D1l Available in Tape & Reel3 6S2 D2l 150C Operating Temperaturel Lead-Free 4 5G2 D2RDS(on) = 0.029DescriptionTop ViewThese HEXFET Power MOSFET's in a DualSO-8 package utilize the lastes

0.7. Size:204K international rectifier
irf7313pbf-1.pdf pdf_icon

IRF7313PbF-1HEXFET Power MOSFETVDS 30 V 1 8S1 D1RDS(on) max 2 7G1 D10.029 (@V = 10V)GS3 6S2 D2Qg (typical) 22 nC45G2 D2ID 6.5 ASO-8(@T = 25C)ATop ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Enviro

0.8. Size:236K international rectifier
irf7317pbf.pdf pdf_icon

PD - 95296IRF7317PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface Mount VDSS 20V -20V3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.029 0.058DescriptionTop ViewFifth Generation HEXFETs from International Rectif

0.9. Size:239K international rectifier
auirf7313q.pdf pdf_icon

PD - 97751AUTOMOTIVE GRADEAUIRF7313QHEXFET Power MOSFETFeaturesl Advanced Planar Technologyl Dual N Channel MOSFETV(BR)DSS30V1 8S1 D1l Low On-Resistance2 7G1 D1l Dynamic dV/dT Rating RDS(on) typ.23m3 6S2 D2l 175C Operating Temperature max. 29m4 5l Fast Switching G2 D2l Lead-Free, RoHS CompliantID6.9ATop Viewl Automotive Qualified*Des

0.10. Size:205K international rectifier
irf7313pbf.pdf pdf_icon

PD - 95039IRF7313PbFHEXFET Power MOSFETl Generation V Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = 30Vl Dual N-Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-FreeRDS(on) = 0.029Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

0.11. Size:103K international rectifier
irf7316.pdf pdf_icon

PD - 9.1505AIRF7316PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -30V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.058T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

0.12. Size:148K international rectifier
irf7314q.pdf pdf_icon

PD -93945AIRF7314QHEXFET Power MOSFETTypical ApplicationsVDSS RDS(on) max ID Anti-lock Braking Systems (ABS) -20V 0.058@VGS = -4.5V -5.2A Electronic Fuel Injection0.098@VGS = -2.7V -4.42A Air bagBenefits Advanced Process Technology Dual P-Channel MOSFET1 8S1 D1 Ultra Low On-Resistance2 7G1 D1 175C Operating Temperature3 6S2 D2

0.13. Size:103K international rectifier
irf7316s.pdf pdf_icon

0.14. Size:1973K international rectifier
irf7311pbf.pdf pdf_icon

PD - 95180IRF7311PbF Lead-Freewww.irf.com 14/24/04IRF7311PbF2 www.irf.comIRF7311PbFwww.irf.com 3IRF7311PbF4 www.irf.comIRF7311PbFwww.irf.com 5IRF7311PbFSO-8 Package OutlineDimensions are shown in milimeters (inches)I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I SO-8 Part Mark

0.15. Size:147K international rectifier
irf7314.pdf pdf_icon

PD - 9.1436BIRF7314PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -20V2 7 Dual P-Channel MOSFETG1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

0.16. Size:209K international rectifier
irf7311.pdf pdf_icon

PD - 91435CIRF7311HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = 20V Dual N-Channel MOSFET2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.029Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance

0.17. Size:195K international rectifier
irf7314pbf.pdf pdf_icon

PD - 95181IRF7314PbFHEXFET Power MOSFETl Generation V Technology1 8S1 D1l Ultra Low On-ResistanceVDSS = -20V2 7l Dual P-Channel MOSFETG1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-Free RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

0.18. Size:137K international rectifier
irf7319.pdf pdf_icon

PD - 9.1606AIRF7319PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE TN-Ch P-Ch1 8 Ultra Low On-ResistanceS1 D1 Dual N and P Channel MOSFET 2 7G1 D1VDSS 30V -30V Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2P-C H ANN EL MO SFE TRDS(on) 0.029 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifi

0.19. Size:215K international rectifier
irf7316qpbf.pdf pdf_icon

PD - 96126AIRF7316QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P- Channel MOSFETVDSS = -30V2 7l Surface Mount G1 D1l Available in Tape & Reel3 6S2 D2l 150C Operating Temperature4 5G2 D2l Lead-FreeRDS(on) = 0.058Top ViewDescriptionThese HEXFET Power MOSFET's in a DualSO-8 package utilize the laste

0.20. Size:203K international rectifier
irf7316pbf.pdf pdf_icon

PD - 95182IRF7316PbFHEXFET Power MOSFETl Generation V Technology1 8S1 D1l Ultra Low On-ResistanceVDSS = -30V2 7l Dual P-Channel MOSFETG1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-Free RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

0.21. Size:156K international rectifier
irf7317.pdf pdf_icon

PD - 9.1568BIRF7317PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-ResistanceS1 D1 Dual N and P Channel MOSFET2 7G1 D1 Surface Mount VDSS 20V -20V3 6S2 D2 Fully Avalanche Rated4 5G2 D2P-CHANNEL MOSFETRDS(on) 0.029 0.058DescriptionTop ViewFifth Generation HEXFETs from International Rectifierut

0.22. Size:224K international rectifier
irf7319pbf.pdf pdf_icon

PD - 95267IRF7319PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45l Lead-Free G2 D2P-CHANNEL MOSFETRDS(on) 0.029 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifi

0.23. Size:203K international rectifier
irf7316pbf-1.pdf pdf_icon

IRF7316TRPbF-1HEXFET Power MOSFETVDS -30 V1 8S1 D1RDS(on) max 0.058 2 7G1 D1(@V = -10V)GSQg (typical) 23 nC 3 6S2 D2ID 4 5-4.9 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free En

0.24. Size:578K infineon
auirf7313q.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7313Q VDSS Features 30V 1 8S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 23m Dual N Channel MOSFET 3 6S2 D2 max. 4 Low On-Resistance 5 29mG2 D2 Logic Level Gate Drive ID 6.9A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Lead-Free, RoHS Compliant

0.25. Size:256K infineon
auirf7316q.pdf pdf_icon

0.26. Size:909K cn vbsemi
irf7314trpbf.pdf pdf_icon

IRF7314TRPBFwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top

0.27. Size:1355K cn vbsemi
irf7313qtr.pdf pdf_icon

IRF7313QTRwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

0.28. Size:892K cn vbsemi
irf7319tr.pdf pdf_icon

IRF7319TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG

0.29. Size:852K cn vbsemi
irf7311tr.pdf pdf_icon

IRF7311TRwww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25

0.30. Size:1946K cn vbsemi
irf7317tr.pdf pdf_icon

IRF7317TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG

0.31. Size:834K cn vbsemi
irf7313tr.pdf pdf_icon

IRF7313TRwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Другие MOSFET... IRF723 , IRF7233 , IRF730 , IRF730A , IRF730AL , IRF730AS , IRF730FI , IRF730S , IRF540 , IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 , IRF734 , IRF7353D1 , IRF737LC .