Справочник MOSFET. SM4842NSK

 

SM4842NSK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SM4842NSK
   Маркировка: 4842NS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 7 nC
   trⓘ - Время нарастания: 13.5 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0106 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для SM4842NSK

 

 

SM4842NSK Datasheet (PDF)

 ..1. Size:331K  sino
 sm4842nsk.pdf

SM4842NSK SM4842NSK

SM4842NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/10A,DD RDS(ON)= 10.6m (max.) @ VGS= 10V RDS(ON)= 12m (max.) @ VGS= 4.5VS RDS(ON)= 16.2m (max.) @ VGS= 2.5VSS 100% UIS and Rg tested GTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )D D D D (RoHS Compliant)(4)ApplicationsG Power Manage

 8.1. Size:801K  cn sps
 sm4842prl.pdf

SM4842NSK SM4842NSK

SM4842PRL30V /7.7A Dual 2N Power MOSFET C B03C B 30V /7.7A Dual 2N Power MOSFET 8B03CGeneral Description 30 VV DS30V /7.7A Dual 2N Power MOSFET 21.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 33.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 7.7 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

 9.1. Size:279K  sino
 sm4840nsk.pdf

SM4842NSK SM4842NSK

SM4840NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/12A,DD RDS(ON)= 9.2m (max.) @ VGS= 10V RDS(ON)= 13.7m (max.) @ VGS= 4.5VS Integrated Schottky DiodeSSG Avalanche RatedTop View of SOP-8 Reliable and Rugged(5,6,7,8) Lead Free and Green Devices AvailableD D DD (RoHS Compliant)Applications(4) G Power Management in Notebook

 9.2. Size:174K  sino
 sm4843nsk.pdf

SM4842NSK SM4842NSK

SM4843NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/15A,DD RDS(ON)= 6m(max.) @ VGS= 10V RDS(ON)= 8.4m(max.) @ VGS= 4.5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D DApplications(4) Power Management in Notebook Computer,G Portable Equipment and Batter

 9.3. Size:177K  sino
 sm4844nhk.pdf

SM4842NSK SM4842NSK

SM4844NHKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/15.5A,DD RDS(ON)= 4.4m(max.) @ VGS= 10V RDS(ON)= 6.8m(max.) @ VGS= 4.5VS Lower Qg and Qgd for high-speed switchingSSG Lower RDS(ON) to Minimize Conduction LossesTop View of SOP-8 Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices AvailableD D D D (RoHS Compliant)

 9.4. Size:793K  cn sps
 sm4840prl.pdf

SM4842NSK SM4842NSK

SM4840PRL40V /6A Dual 2N Power MOSFET C B04C B 40V /6A Dual 2N Power MOSFET 6B04CGeneral Description 40 VV DS40V /6A Dual 2N Power MOSFET 26.6 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 41.8 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM4840PR

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History: VN30AB | F5001H

 

 
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