PD-95973IRF734PbF Lead-Free12/20/04Document Number: 91049 www.vishay.com1IRF734PbFDocument Number: 91049 www.vishay.com2IRF734PbFDocument Number: 91049 www.vishay.com3IRF734PbFDocument Number: 91049 www.vishay.com4IRF734PbFDocument Number: 91049 www.vishay.com5IRF734PbFDocument Number: 91049 www.vishay.com6IRF734PbFDocument Number: 91049 www.

IRF734, SiHF734Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 450 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS Fast SwitchingQg (Max.) (nC) 45 COMPLIANT Ease of ParallelingQgs (nC) 6.6 Simple Drive RequirementsQgd (nC) 24 Lead (Pb)-freeConfiguration SingleDESCRIPTIONDThird generation Power MOS

AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0433 6 Ultra Low On-Resistance S2 D24 5 max. Logic Level Gate Drive G2 D20.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Co

PD - 96343BAUTOMOTIVE MOSFETAUIRF7343QHEXFET Power MOSFETFeaturesl Advanced Planar TechnologyN-Ch P-ChN-CHANNEL MOSFET1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFETV(BR)DSS55V -55V2 7G1 D1l Surface Mount3 6l Available in Tape & ReelS2 D2RDS(on) typ.0.043 0.095l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualif

PD - 94391BIRF7341QTypical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel InjectionVDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1ABenefits Advanced Process Technology0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax

PD - 97640AUTOMOTIVE GRADEAUIRF7342Q Advanced Planar Technology Low On-Resistance HEXFET Power MOSFET Dual P-Channel MOSFET Dynamic dV/dT Rating 1 8S1 D1V(BR)DSS-55V 150C Operating Temperature 2 7G1 D1 Fast Switching 3 6S2 D2RDS(on) max.0.105 Fully Avalanche Rated 4 5G2 D2 Lead-Free, RoHS CompliantID-3.4ATop View Autom

PD -91859IRF7342HEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -55V2 7 Dual P-Channel MosfetG1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingRDS(on) = 0.105 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu

IRF7341GPbFHEXFET Power MOSFET Advanced Process TechnologyVDSS RDS(on) max ID Dual N-Channel MOSFET Ultra Low On-Resistance 55V 0.050@VGS = 10V 5.1A 175C Operating Temperature0.065@VGS = 4.5V 4.42A Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-FreeDescription1 8S1 D1These HEXFET Power MOSFETs in a Dual SO-8 package2 7ut

PD - 96088IRF7343IPbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface Mount VDSS 55V -55V3 6S2 D2l Fully Avalanche Rated45l Lead-Free G2 D2P-CHANNEL MOSFETRDS(on) 0.050 0.105DescriptionTop ViewFifth Generation HEXFETs from International Rectif

PD- 94101IRF7342D2TMFETKY MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -55V2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET3 6RDS(on) = 105mS D Low VF Schottky Rectifier45G D SO-8 Footprint Schottky Vf = 0.61VTop ViewDescriptionThe FETKYTM family of Co-packaged HEXFETs andSchottky

PD -91709IRF7343HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-ResistanceS1 D1 Dual N and P Channel MOSFET2 7G1 D1 Surface Mount VDSS 55V -55V3 6S2 D2 Fully Avalanche Rated45G2 D2P-CHANNEL MOSFETRDS(on) 0.050 0.105DescriptionTop ViewFifth Generation HEXFETs from International Rectifierutilize advanced

PD -91703IRF7341HEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = 55V2 7 Dual N-Channel MosfetG1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingRDS(on) = 0.050 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing technique

PD - 96109IRF7342QPbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 1 8S1 D1 Dual P Channel MOSFETVDSS = -55V2 7G1 D1 Surface Mount3 6 Available in Tape & ReelS2 D2 150C Operating Temperature4 5G2 D2RDS(on) = 0.105 Automotive [Q101] Qualified Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,

PD - 94391AIRF7341QTypical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel InjectionVDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1ABenefits Advanced Process Technology0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax

PD-95087IRF7341IPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual N-Channel MosfetVDSS = 55V2 7l Surface MountG1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingRDS(on) = 0.050l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanc

PD- 94101AIRF7342D2TMFETKY MOSFET & Schottky Diodel Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -55V2 7l Ideal For Buck Regulator Applications A Kl P-Channel HEXFET3 6RDS(on) = 105mS Dl Low VF Schottky Rectifier45G Dl SO-8 Footprint Schottky Vf = 0.61VTop ViewDescriptionThe FETKYTM family of Co-packaged HEXFETs andSchottky

IRF7342TRPbF-1HEXFET Power MOSFETVDS -55 V1 8S1 D1RDS(on) max 0.105 2 7G1 D1(@V = -10V)GS3Qg (typical) 26 nC 6S2 D2ID 4 5-3.4 A G2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free En

PD - 96110IRF7343QPBFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETN-Ch P-Ch1l Ultra Low On-Resistance 8S1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 55V -55V3 6l Available in Tape & Reel S2 D2l 150C Operating Temperature45G2 D2l Automotive [Q101] QualifiedP-CHANNEL MOSFETRDS(on) 0.050 0.105l Lead-FreeTo

PD - 92547IRF7343PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface Mount VDSS 55V -55V3 6S2 D2l Fully Avalanche Rated45l Lead-Free G2 D2P-CHANNEL MOSFETRDS(on) 0.050 0.105DescriptionTop ViewFifth Generation HEXFETs from International Rectifi

PD - 95200IRF7342PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8l Dual P-Channel Mosfet S1 D1VDSS = -55Vl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingRDS(on) = 0.105l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanc

AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0433 6 Ultra Low On-Resistance S2 D24 5 max. Logic Level Gate Drive G2 D20.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Co

AUTOMOTIVE GRADE AUIRF7343Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1VDSS 55V -55V Ultra Low On-Resistance 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.043 0.0953 6S2 D2 Dual N and P Channel MOSFET max. 0.050 0.10545G2 D2 Surface Mount P-CHANNEL MOSFETID 4.7A -3.4A Availabl

PD -95199IRF7341PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8l Dual N-Channel Mosfet S1 D1VDSS = 55Vl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingRDS(on) = 0.050l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced

AUTOMOTIVE GRADE AUIRF7342Q VDSS 1 8S1 D1Features -55V 2 7G1 D1 Advanced Planar Technology 3 6RDS(on) max. S2 D2 Low On-Resistance 0.1054 5G2 D2 Logic Level Gate Drive ID -3.4A Dual P Channel MOSFET Top View Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS

IRF734160V Dual N-Channel MOSFETDescriptionThis Dual N-Channel MOSFET uses advanced trench technology andSOP-8design to provide excellent R with low gate charge. D1DS(on)D1It can be used in a wide variety of applications.D2D2S1G1S2FeaturesG21) V =60V,I =5 A,R

IRF7343QTRwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VG

IRF7343TRPBFwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at

IRF7342TRwww.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V

IRF7341TRPBFwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Cha

IRF7342QTRwww.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top