Справочник MOSFET. SM3024NSU

 

SM3024NSU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SM3024NSU
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 41 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 16 nC
   trⓘ - Время нарастания: 11.8 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: TO252

 Аналог (замена) для SM3024NSU

 

 

SM3024NSU Datasheet (PDF)

 ..1. Size:270K  sino
 sm3024nsu.pdf

SM3024NSU SM3024NSU

SM3024NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/41A,DRDS(ON)=14m (max.) @ VGS=10VSRDS(ON)=20m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking InformationP

 6.1. Size:253K  sino
 sm3024nsf.pdf

SM3024NSU SM3024NSU

SM3024NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/33A, RDS(ON)= 25m (max.) @ VGS=10V RDS(ON)= 34.5m (max.) @ VGS=4.5VSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)D 100% UIS TestedApplicationsG Synchronous Rectification Motor Control High Current, High Speed SwitchingSN-Channel MO

 9.1. Size:276K  sino
 sm3023nsv.pdf

SM3024NSU SM3024NSU

SM3023NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/9.2A, RDS(ON)= 15m (max.) @ VGS=10VG RDS(ON)= 19.5m (max.) @ VGS=4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View SOT-223(RoHS Compliant)DApplicationsG Switching Regulators. Switching Converters.SN-Channel MOSFETOrdering and Marking InformationPackage Code

 9.2. Size:268K  sino
 sm3023nsu.pdf

SM3024NSU SM3024NSU

SM3023NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/49A,Drain 4RDS(ON)= 11.5m (max.) @ VGS=10V3Source RDS(ON)= 17m (max.) @ VGS=4.5V 21 Reliable and Rugged Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering

 9.3. Size:230K  sino
 sm3020psu.pdf

SM3024NSU SM3024NSU

SM3020PSU P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-43A, D RDS(ON)= 18m (max.) @ VGS= -10VS RDS(ON)= 30m (max.) @ VGS= -4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)D Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D)GApplications Power Magagement in Desktop or DC/DCSConver

 9.4. Size:770K  globaltech semi
 gsm3025s.pdf

SM3024NSU SM3024NSU

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/7.0A,RDS(ON)=36m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m@VGS=2.5V These devices are particularly suited for low Super high density cell design for e

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