IRF7401 datasheet, подбор замены

 ..1. Size:197K  international rectifier
 irf7401pbf.pdf 

PD - 95724 IRF7401PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D VDSS = 20V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proc

 ..2. Size:118K  international rectifier
 irf7401.pdf 

PD - 9.1244C IRF7401 HEXFET Power MOSFET Generation V Technology A A 1 8 Ultra Low On-Resistance S D VDSS = 20V 2 7 N-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.022 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to

 0.1. Size:236K  international rectifier
 irf7401pbf-1.pdf 

IRF7401PbF-1 HEXFET Power MOSFET VDS 20 V A A 1 8 S D RDS(on) max 0.022 2 7 (@V = 4.5V) S D GS Qg 48 nC 3 6 S D ID 4 5 8.7 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Fri

 8.1. Size:231K  international rectifier
 irf7403pbf.pdf 

PD - 95301 IRF7403PbF HEXFET Power MOSFET l Generation V Technology A l Ultra Low On-Resistance A 1 8 S D l N-Channel Mosfet VDSS = 30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proc

 8.2. Size:235K  international rectifier
 irf7406pbf.pdf 

PD - 95302 IRF7406PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 l P-Channel Mosfet S D VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.045 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

 8.3. Size:1404K  international rectifier
 irf740lcpbf.pdf 

PD - 94880 IRF740LCPbF Lead-Free 12/10/03 Document Number 91052 www.vishay.com 1 IRF740LCPbF Document Number 91052 www.vishay.com 2 IRF740LCPbF Document Number 91052 www.vishay.com 3 IRF740LCPbF Document Number 91052 www.vishay.com 4 IRF740LCPbF Document Number 91052 www.vishay.com 5 IRF740LCPbF Document Number 91052 www.vishay.com 6 IRF740LCPbF Document Nu

 8.4. Size:183K  international rectifier
 irf7402pbf.pdf 

PD - 95202 IRF7402PbF HEXFET Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package Low Profile (

 8.5. Size:262K  international rectifier
 irf7406gpbf.pdf 

PD -96259 IRF7406GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A l P-Channel Mosfet 1 8 S D l Surface Mount VDSS = -30V 2 7 S D l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l Lead-Free RDS(on) = 0.045 l Halogen-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize

 8.6. Size:242K  international rectifier
 irf7404qpbf.pdf 

PD - 96127A IRF7404QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D VDSS = -20V l P Channel MOSFET 2 7 S D l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150 C Operating Temperature G D RDS(on) = 0.040 l Lead-Free Top View Description These HEXFET Power MOSFET's in package utilize the lastest processing techniqu

 8.7. Size:304K  international rectifier
 irf740as-l.pdf 

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2

 8.8. Size:951K  international rectifier
 irf740spbf.pdf 

PD - 95204 IRF740SPbF Lead-Free 4/29/04 Document Number 91055 www.vishay.com 1 IRF740SPbF Document Number 91055 www.vishay.com 2 IRF740SPbF Document Number 91055 www.vishay.com 3 IRF740SPbF Document Number 91055 www.vishay.com 4 IRF740SPbF Document Number 91055 www.vishay.com 5 IRF740SPbF Document Number 91055 www.vishay.com 6 IRF740SPbF D2Pak Package Outli

 8.9. Size:135K  international rectifier
 irf740as.pdf 

PD- 92005 SMPS MOSFET IRF740AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanch

 8.10. Size:196K  international rectifier
 irf740a.pdf 

PD- 94828 SMPS MOSFET IRF740APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanch

 8.11. Size:234K  international rectifier
 irf7404pbf-1.pdf 

IRF7404TRPbF-1 HEXFET Power MOSFET VDS -20 V A 1 8 S D RDS(on) max 0.04 2 7 (@V = -4.5V) S D GS Qg 50 nC 3 6 S D ID 4 5 -6.7 A G D (@T = 25 C) A Top View SO-8 Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Frie

 8.12. Size:316K  international rectifier
 irf740alpbf irf740aspbf.pdf 

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and 2

 8.13. Size:163K  international rectifier
 irf7404.pdf 

PD - 9.1246C IRF7404 HEXFET Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a

 8.14. Size:231K  international rectifier
 irf7406pbf-1.pdf 

IRF7406TRPbF-1 HEXFET Power MOSFET VDS -30 V A 1 8 S D RDS(on) max 0.045 2 7 (@V = -10V) S D GS Qg (max) 59 nC 3 6 S D ID 4 5 G D -5.8 A (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environment

 8.15. Size:136K  international rectifier
 irf7402.pdf 

PD - 93851A IRF7402 HEXFET Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (

 8.16. Size:231K  international rectifier
 irf7404pbf.pdf 

PD - 95203 IRF7404PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel Mosfet VDSS = -20V 2 7 S D l Surface Mount 3 6 S l Available in Tape & Reel D 4 5 l Dynamic dv/dt Rating G D RDS(on) = 0.040 l Fast Switching Top View l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

 8.17. Size:171K  international rectifier
 irf740s.pdf 

 8.18. Size:116K  international rectifier
 irf7403.pdf 

PD - 9.1245B PRELIMINARY IRF7403 HEXFET Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel Mosfet VDSS = 30V 2 7 S D Surface Mount 3 6 Available in Tape & Reel S D Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

 8.19. Size:926K  international rectifier
 irf740.pdf 

PD - 94872 IRF740PbF Lead-Free 12/5/03 Document Number 91053 www.vishay.com 1 IRF740PbF Document Number 91053 www.vishay.com 2 IRF740PbF Document Number 91053 www.vishay.com 3 IRF740PbF Document Number 91053 www.vishay.com 4 IRF740PbF Document Number 91053 www.vishay.com 5 IRF740PbF Document Number 91053 www.vishay.com 6 IRF740PbF TO-220AB Package Outline

 8.20. Size:174K  international rectifier
 irf740lc.pdf 

 8.21. Size:114K  international rectifier
 irf7406.pdf 

PD - 9.1247C IRF7406 PRELIMINARY HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D VDSS = -30V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.045 Dynamic dv/dt Rating Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

 8.22. Size:482K  st
 irf740 irf741 irf742 irf743-fi.pdf 

 8.23. Size:93K  st
 irf740s.pdf 

IRF740S N - CHANNEL 400V - 0.48 - 10A- D2PAK PowerMESH MOSFET TYPE VDSS RDS(on) ID IRF740S 400 V

 8.24. Size:93K  st
 irf740.pdf 

IRF740 N - CHANNEL 400V - 0.48 - 10 A - TO-220 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRF740 400 V

 8.25. Size:924K  fairchild semi
 irf740b irfs740b.pdf 

 8.26. Size:154K  fairchild semi
 irf740.pdf 

 8.27. Size:191K  samsung
 irfp340-343 irf740-743.pdf 

 8.28. Size:937K  samsung
 irf740a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 8.29. Size:191K  samsung
 irfp340 irfp341 irfp342 irfp343 irf740 irf741 irf742 irf743.pdf 

 8.30. Size:283K  vishay
 irf740b.pdf 

IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal design VDS (V) at TJ max. 450 - Low area specific on-resistance RDS(on) max. ( ) at 25 C VGS = 10 V 0.6 - Low input capacitance (Ciss) Available Qg max. (nC) 30 - Reduced capacitive switching losses Qgs (nC) 4 - High body diode ruggedness Qgd (nC) 7 - Avalanche energy rated (U

 8.31. Size:205K  vishay
 irf740a sihf740a.pdf 

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) ( )VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configur

 8.32. Size:195K  vishay
 irf740spbf sihf740s.pdf 

IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt Rating Qgs (nC) 9.0 Repetitive Avalanche Rated Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Sin

 8.33. Size:197K  vishay
 irf740lc irf740lcpbf sihf740lc.pdf 

IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Comp

 8.34. Size:207K  vishay
 irf740as sihf740as irf740al sihf740al.pdf 

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 400 Definition RDS(on) ( )VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.9 Ruggedness Qgd (nC) 16 Fully Characterized Capac

 8.35. Size:196K  vishay
 irf740 sihf740.pdf 

IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES

 8.36. Size:197K  vishay
 irf740lc sihf740lc.pdf 

IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Comp

 8.37. Size:171K  vishay
 irf740s sihf740s.pdf 

IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt Rating Qgs (nC) 9.0 Repetitive Avalanche Rated Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Sin

 8.38. Size:206K  vishay
 irf740apbf sihf740a.pdf 

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) ( )VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configur

 8.39. Size:196K  vishay
 irf740pbf sihf740.pdf 

IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES

 8.40. Size:48K  hsmc
 hirf740.pdf 

Spec. No. MOS200512 HI-SINCERITY Issued Date 2005.09.01 Revised Date 2005.09.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF740 Series Pin Assignment HIRF740 / HIRF740F Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N-Channel MOSFETs provide the designer with the best combination o

 8.41. Size:990K  blue-rocket-elect
 irf740.pdf 

IRF740 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

 8.42. Size:836K  cn vbsemi
 irf7404tr.pdf 

IRF7404TR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical

 8.43. Size:204K  cn minos
 irf740.pdf 

Silicon N-Channel Power MOSFET Description The IRF740 uses advanced technology and design to provide excellent RDS(ON). It can be used in a wide variety of applications. General Features VDS=400V,ID=10A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application Adapter and charger Electrical C

 8.44. Size:213K  inchange semiconductor
 irf740a.pdf 

isc N-Channel Mosfet Transistor IRF740A FEATURES Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply Uninterruptable power supply High speed power switching ABSOLUTE MAXIMUM

 8.45. Size:231K  inchange semiconductor
 irf740fi.pdf 

isc N-Channel MOSFET Transistor IRF740FI DESCRIPTION Drain Current I = 5.5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltag

 8.46. Size:235K  inchange semiconductor
 irf740.pdf 

isc N-Channel MOSFET Transistor IRF740 FEATURES Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply Uninterruptable power supply High speed power switching ABSOLUTE MAXIMUM