SM3023NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/49A,Drain 4RDS(ON)= 11.5m (max.) @ VGS=10V3Source RDS(ON)= 17m (max.) @ VGS=4.5V 21 Reliable and Rugged Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering

SM3023NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/9.2A, RDS(ON)= 15m (max.) @ VGS=10VG RDS(ON)= 19.5m (max.) @ VGS=4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View SOT-223(RoHS Compliant)DApplicationsG Switching Regulators. Switching Converters.SN-Channel MOSFETOrdering and Marking InformationPackage Code

SM3024NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/41A,DRDS(ON)=14m (max.) @ VGS=10VSRDS(ON)=20m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking InformationP

SM3020PSU P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-43A, D RDS(ON)= 18m (max.) @ VGS= -10VS RDS(ON)= 30m (max.) @ VGS= -4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)D Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D)GApplications Power Magagement in Desktop or DC/DCSConver

SM3024NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/33A, RDS(ON)= 25m (max.) @ VGS=10V RDS(ON)= 34.5m (max.) @ VGS=4.5VSD Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)D 100% UIS TestedApplicationsG Synchronous Rectification Motor Control High Current, High Speed SwitchingSN-Channel MO

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/7.0A,RDS(ON)=36m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m@VGS=2.5V These devices are particularly suited for low Super high density cell design for e