SM7002NSAN - описание и поиск аналогов

SM7002NSAN N-Channel Enhancement Mode MOSFET Features Pin Description D 60V/0.45A , RDS(ON)=2.2 (max.) @ VGS=10V S RDS(ON)=2.6 (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23N (RoHS Compliant) D ESD Protection HBM=(+/-)1600V MM=(+/-)100V G Applications High Speed Switching. S Analog Switching Application. N-Chann

SM7002NSF N-Channel Enhancement Mode MOSFET Features Pin Description 68V/80A, RDS(ON)=10.8m (max.) @ VGS=10V Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) Top View of TO-220 D Applications Synchronous Rectification. G Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code SM7002NS

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5 @VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5 @VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0 @VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0 @VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5 @VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5 @VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

GSM7002K 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM7002K, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4 @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.3A , RDS(ON)=3.0 @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low E

60V N-Channel Enhancement Mode MOSFET Product Description Features The GS7002 is the N-Channel enhancement mode 60V/0.50A , RDS(ON)= 6.0 @VGS=10V field effect transistors are produced using high cell 60V/0.30A , RDS(ON)= 7.0 @VGS=5V density DMOS technology. These products have Super high density cell design for extremely been designed to minimize on-state resistance lo

SSM7002EGU N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM7002EGU acheives fast switching performance BVDSS 50V with low gate charge without a complex drive circuit. It RDS(ON) 3 is suitable for low voltage applications such as small converters and general load-switching circuits. I D 250mA The SSM7002EGU is supplied in a RoHS-compliant Pb-free; RoHS-

SSM7002KGEN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM7002KGEN acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 2 is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 640mA D The SSM7002KGEN is supplied in an RoHS-compliant Pb-free; R

SSM7002DGU Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM7002DG acheives fast switching performance BVDSS 50V with low gate charge without a complex drive circuit. It RDS(ON) 3 is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I D 250mA The SSM7002DGU is supplied in a RoHS-compliant Pb-free;