Справочник MOSFET. SM3323NHQG

 

SM3323NHQG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SM3323NHQG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 26.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 54 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8.4 ns
   Cossⓘ - Выходная емкость: 530 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: DFN3X3D-8

 Аналог (замена) для SM3323NHQG

 

 

SM3323NHQG Datasheet (PDF)

 ..1. Size:167K  sino
 sm3323nhqg.pdf

SM3323NHQG SM3323NHQG

SM3323NHQG N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/54A,DDDD RDS(ON)= 6m (Max.) @ VGS=10V RDS(ON)= 9.7m (Max.) @ VGS=4.5VGS Reliable and Rugged SS Lower Qg and Qgd for high-speed switchingDFN3x3D-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoHS

 5.1. Size:252K  sino
 sm3323nhqa.pdf

SM3323NHQG SM3323NHQG

SM3323NHQA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/54A, DDDD RDS(ON)= 6m (Max.) @ VGS=10V RDS(ON)= 9.7m (Max.) @ VGS=4.5VGSSS Reliable and Rugged Lower Qg and Qgd for high-speed switchingDFN3.3x3.3A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoHS Comp

 9.1. Size:167K  sino
 sm3324nhqg.pdf

SM3323NHQG SM3323NHQG

SM3324NHQG N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/77A,DDDD RDS(ON)= 3.6m (Max.) @ VGS=10V RDS(ON)= 5.3m (Max.) @ VGS=4.5VGS Lower Qg and Qgd for high-speed switching SS Lower RDS(ON) to Minimize Conduction LossesDFN3x3D-8_EP ESD Protection(5,6,7,8) 100% UIS + Rg TestedDDDD Reliable and Rugged Lead Free and Green Devic

 9.2. Size:273K  sino
 sm3326nhqa.pdf

SM3323NHQG SM3323NHQG

SM3326NHQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/27.5A,DDRDS(ON) =9m (max.) @ VGS =10VRDS(ON) =14m (max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3x3A-8_EP ESD Protection Reliable and Rugged(5,6,7,8)DDDD Lead Free and Green Devices Available(RoHS Compliant)Applications(4) G Power Management in Notebook Computer,Portab

 9.3. Size:162K  sino
 sm3322nhqa.pdf

SM3323NHQG SM3323NHQG

SM3322NHQA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A,DDD RDS(ON)= 4.2m (Max.) @ VGS=10V D RDS(ON)= 6.5m (Max.) @ VGS=4.5VG Reliable and Rugged SSS Lower Qg and Qgd for high-speed switchingDFN3x3A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoH

 9.4. Size:182K  sino
 sm3320nsqg.pdf

SM3323NHQG SM3323NHQG

SM3320NSQA/SM3320NSQGN-Channel Enhancement Mode MOSFETFeatures Pin Description Top View Bottom View Top View Bottom View 30V/49A,DDD DDD DD RDS(ON) = 7.8m(max.) @ VGS =10V RDS(ON) = 12.3m(max.) @ VGS =4.5VGSG SSSSS Integrated Schottky DiodeDFN3x3A-8_EP DFN3x3D-8_EP Avalanche Rated 100% UIS + Rg Tested(5,6,7,8)DD DD Reliable and Rugged

 9.5. Size:1359K  globaltech semi
 gsm3326ws.pdf

SM3323NHQG SM3323NHQG

GSM3326WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3326WS, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=36m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/10A,RDS(ON)=46m@VGS=4.5V P-ChannelThese devices are particularly suited for low -30V/-8A,RDS(ON)=60m@VGS=-10V voltage

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