SM3319NAQG - описание и поиск аналогов

SM3319NAQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/14A, RDS(ON) = 24m (max.) @ VGS = 10V G RDS(ON) = 35m (max.) @ VGS = 4.5V S S S Avalanche Rated DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) DDDD ESD Protection Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power Management in No

SM3319NSQA/SM3319NSQG N-Channel Enhancement Mode MOSFET Features Pin Description Top View Bottom View Top View Bottom View 30V/23A, D D D D D RDS(ON) = 21m (max.) @ VGS = 10V D D D RDS(ON) = 30m (max.) @ VGS = 4.5V G SG S S S S Provide Excellent Qgd x RDS(ON) S DFN3x3A-8_EP DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and

SM3313PSQG P-Channel Enhancement Mode MOSFET Features Pin Description D D D D -12V/-37A, RDS(ON) =14m (max.) @ VGS =-4.5V RDS(ON) =19m (max.) @ VGS =-2.5V SG S S RDS(ON) =26m (max.) @ VGS =-1.8V DFN3x3D-8_EP RDS(ON) =36m (max.) @ VGS =-1.5V 100% UIS + Rg Tested ( 5,6,7,8 ) D D D D Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) (4)

SM3318NSQA/SM3318NSQG N-Channel Enhancement Mode MOSFET Features Pin Description Top View Bottom View Top View Bottom View 30V/44A, D DD RDS(ON) = 9.2m (max.) @ VGS =10V D D D DD RDS(ON) = 13.7m (max.) @ VGS =4.5V G SG S S S Integrated Schottky Diode SS DFN3x3-8(punch type) DFN3x3-8(saw type) Avalanche Rated Reliable and Rugged (5,6,7,8) DD DD Lead Free and Gre

SM3316NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/25A, D RDS(ON) =16m (max.) @ VGS =10V RDS(ON) =21.5m (max.) @ VGS =4.5V G S S S Avalanche Rated DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer, Port

SM3313NSQA/SM3313NSQG N-Channel Enhancement Mode MOSFET Features Pin Description Top View Bottom View Top View Bottom View 30V/46A, D D D D D D D D RDS(ON) = 8.1m (max.) @ VGS = 10V RDS(ON) = 10.7m (max.) @ VGS = 4.5V G SG S S S S S Provide Excellent Qgd x RDS(ON) DFN3x3A-8_EP DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free

SM3314NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/12A, RDS(ON) = 10.5m (max.) @ VGS = 10V G RDS(ON) = 15m (max.) @ VGS = 4.5V S S S Avalanche Rated DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Comput

SM3317NSQA N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/34A, RDS(ON) =11.5m (max.) @ VGS =10V G S RDS(ON) =15.5m (max.) @ VGS =4.5V S S Avalanche Rated DFN3x3A-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer

SM3315NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/54A, RDS(ON) = 6.6m (max.) @ VGS = 10V RDS(ON) = 9.5m (max.) @ VGS = 4.5V G S S S Avalanche Rated DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power Management in Notebook Comput

SM3317NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/34A, D RDS(ON) =11.5m (max.) @ VGS =10V RDS(ON) =15.5m (max.) @ VGS =4.5V G S S S Avalanche Rated DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer,

SM3316NSQA N-Channel Enhancement Mode MOSFET Features Pin Description D D 30V/25A, D D RDS(ON) =16m (max.) @ VGS =10V RDS(ON) =21.5m (max.) @ VGS =4.5V G S S S 100% UIS + Rg Tested DFN3x3A-8_EP Avalanche Rated Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer,

GSM3310W GSM3310W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=19m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

GSM3316W GSM3316W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=148m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

SSM3310GH,J P-channel Enhancement-mode Power MOSFET 2.5V low gate drive capability BV -20V DSS D Simple drive requirement R 150m DS(ON) Fast switching ID -10A G Pb-free; RoHS compliant. S DESCRIPTION G The SSM3310GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for use in low voltage b