Справочник MOSFET. NCEP85T25D

 

NCEP85T25D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP85T25D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 250 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 142 nC
   trⓘ - Время нарастания: 73 ns
   Cossⓘ - Выходная емкость: 1700 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

NCEP85T25D Datasheet (PDF)

 ..1. Size:296K  ncepower
 ncep85t25d.pdf pdf_icon

NCEP85T25D

Pb Free Producthttp://www.ncepower.com NCEP85T25DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.1. Size:1128K  ncepower
 ncep85t25vd.pdf pdf_icon

NCEP85T25D

http://www.ncepower.com NCEP85T25VDNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25VD uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc

 5.2. Size:753K  ncepower
 ncep85t25.pdf pdf_icon

NCEP85T25D

Pb Free Producthttp://www.ncepower.comNCEP85T25NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-f

 5.3. Size:298K  ncepower
 ncep85t25t.pdf pdf_icon

NCEP85T25D

Pb Free Producthttp://www.ncepower.com NCEP85T25TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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Другие MOSFET... IRF7413A , IRF7416 , IRF742 , IRF7421D1 , IRF7422D2 , IRF743 , IRF744 , NCEP85T16D , AO4407 , NCEP85T25T , NCEP85T35T , IRF750A , IRF7521D1 , IRF7523D1 , IRF7524D1 , IRF7526D1 , IRF7555 .

History: NCV8402 | HSBB3072

 

 
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