SM7307DSKP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SM7307DSKP
Маркировка: 7307DS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 19.2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 35 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 20 nC
Время нарастания (tr): 12.4 ns
Выходная емкость (Cd): 190 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0084 Ohm
Тип корпуса: DFN5X6C-8
Аналог (замена) для SM7307DSKP
SM7307DSKP Datasheet (PDF)
sm7307dskp.pdf
SM7307DSKPDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/35A,D2D2RDS(ON) = 8.4m (max.) @ VGS = 10V D1D1RDS(ON) = 11.4m (max.) @ VGS = 4.5VPin 1 100% UIS + Rg TestedS2G2S1G1 ESD ProtectionDFN5x6C-8_EP2 Reliable and Rugged Lead Free Available (RoHS Compliant)D1 D1 D2 D2Applications Power Management in Notebook Computer,G1 G2 Portable E
sm7305eskp.pdf
SM7305ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 230V/50A,DUAL DFN5x6-8RDS(ON) = 3.3m (max.) @ VGS =10VRDS(ON) = 5.2m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG1 (1) Lead Free Availabl
sm7304eskp.pdf
SM7304ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/27A,G2S2RDS(ON) = 14m (max.) @ VGS = 10VRDS(ON) = 19.5m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 2 (Integrated Schottky Diode)30V/50A,DUAL DFN5x6-8RDS(ON) = 7.4m (max.) @ VGS =10VRDS(ON) = 11.8m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and Rug
sm7303eskp.pdf
SM7303ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 2 (Integrated Schottky Diode)30V/50A,DUAL DFN5x6-8RDS(ON) = 5m (max.) @ VGS =10VRDS(ON) = 6.5m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG
sm7308cskp.pdf
SM7308CSKPDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel (Integrated Schottky Diode)D230V/24A, D1D2D1RDS(ON) = 22m (max.) @ VGS = 10VRDS(ON) = 32.5m (max.) @ VGS = 4.5V G2Pin 1S2G1 P ChannelS1-30V/-19.8A,DFN5x6C-8_EP2RDS(ON) = 30m (max.) @ VGS =-10VRDS(ON) = 46m (max.) @ VGS =-4.5V (8) (7) (6) (5)D1 D1 D2 D2 100% UIS +
sm7306eskp.pdf
SM7306ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 230V/50A, DUAL DFN5x6-8RDS(ON) = 4m (max.) @ VGS =10VRDS(ON) = 5.3m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG1 (1) Lead Free Available (
sm7302eskp.pdf
SM7302ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 2 (Integrated Schottky Diode)30V/50A,DUAL DFN5x6-8RDS(ON) = 4m (max.) @ VGS =10VRDS(ON) = 5.9m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG
sm7301dsk.pdf
SM7301DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 30V/12A,D2 RDS(ON)= 10m (max.) @ VGS= 10V RDS(ON)= 15.5m (max.) @ VGS= 4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications Power Management in Notebook
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