SM4401PSK - описание и поиск аналогов

SM4401PSK P-Channel Enhancement Mode MOSFET Features Pin Description D D D D -40V/-16.7A, RDS(ON)= 8.5m (max.) @ VGS=-20V S RDS(ON)= 10m (max.) @ VGS=-10V S S RDS(ON)= 16m (max.) @ VGS=-4.5V G Top View of SOP-8 Reliable and Rugged Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) DDDD HBM ESD protection level pass 8KV Note The diode connected betw

SM4401PSKP P-Channel Enhancement Mode MOSFET Features Pin Description -40V/-55A, D D D RDS(ON)= 8m (max.) @ VGS=-20V D RDS(ON)= 9.4m (max.) @ VGS=-10V RDS(ON)= 15m (max.) @ VGS=-4.5V G Pin 1 S S HBM ESD capability level of 8KV typical S DFN5x6A-8_EP 100% UIS + Rg Tested Reliable and Rugged ( 5,6,7,8 ) DDDD Lead Free and Green Devices Available (RoHS Compliant)

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

TSM4404 30V N-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m ) ID (A) 3. Source 30 @ VGS = 10V 8.5 4. Gate 5, 6, 7, 8. Drain 30 33 @ VGS = 4.5V 8.5 48 @ VGS = 2.5V 5 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC

SM4403PSK P-Channel Enhancement Mode MOSFET Features Pin Description D D D D -40V/-11A, RDS(ON)= 18m (max.) @ VGS=-10V S RDS(ON)= 27m (max.) @ VGS=-4.5V S S Reliable and Rugged G Top View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant) ( 5,6,7,8 ) D D D D Applications (4) G Power Management in LCD TV Inverter. S S S (1, 2, 3) P-Channel MOSFET Or

GSM4403 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-8A,RDS(ON)=34m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m @VGS=-1.8V Super high density cell design for extremely These devices are par

SSM4409GEM P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D D D BVDSS -35V Simple Drive Requirement D RDS(ON) 7.5m Low On-resistance G Fast Switching Characteristic ID -14.5A S S S RoHS Compliant SO-8 DESCRIPTION D The Advanced Power MOSFETs from Silicon Standard Corp. G provide the designer with the best combination of fast switching, ruggedized devic

SSM4407GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM4407GM acheives fast switching performance BVDSS -30V with low gate charge without a complex drive circuit. It RDS(ON) 14m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -10.7A D The SSM4407GM is supplied in a RoHS-compliant Pb-free; RoHS

HSM4407 P-Ch 30V Fast Switching MOSFETs General Description Product Summary The HSM4407 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 15 m gate charge for most of the synchronous buck converter applications. ID -11.5 A The HSM4407 meet the RoHS and Green Product requirement 100% EAS guaranteed with full functio

SM4405PRL -30V /-6A Single P Power MOSFET C P03C P -30V /-6A Single P Power MOSFET 6P03C General Description -30 V V DS -30V /-6A Single P Power MOSFET 59.5 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 93.5 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant -6 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Teste

SM4404BPRL 30V /10A Complementary NP Power MOSFET C N03C N 30V /10A Complementary NP Power MOSFET 9N03C General Description 30 V V DS 30V /10A Complementary NP Power MOSFET 14.0 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 18.0 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 10 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS