Справочник MOSFET. SM4401PSK

 

SM4401PSK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SM4401PSK
   Маркировка: 4401
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 4.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 60 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 417 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для SM4401PSK

 

 

SM4401PSK Datasheet (PDF)

 ..1. Size:263K  sino
sm4401psk.pdf

SM4401PSK
SM4401PSK

SM4401PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD -40V/-16.7A,RDS(ON)= 8.5m (max.) @ VGS=-20VSRDS(ON)= 10m (max.) @ VGS=-10VSSRDS(ON)= 16m (max.) @ VGS=-4.5VGTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)DDDD HBM ESD protection level pass 8KVNote : The diode connected betw

 0.1. Size:261K  sino
sm4401pskp.pdf

SM4401PSK
SM4401PSK

SM4401PSKPP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-55A,DDD RDS(ON)= 8m (max.) @ VGS=-20VD RDS(ON)= 9.4m (max.) @ VGS=-10V RDS(ON)= 15m (max.) @ VGS=-4.5VGPin 1SS HBM ESD capability level of 8KV typicalSDFN5x6A-8_EP 100% UIS + Rg Tested Reliable and Rugged( 5,6,7,8 )DDDD Lead Free and Green Devices Available (RoHSCompliant)

 8.1. Size:1032K  globaltech semi
gsm4401s.pdf

SM4401PSK
SM4401PSK

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.1. Size:242K  taiwansemi
tsm4404cs.pdf

SM4401PSK
SM4401PSK

TSM4404 30V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 30 @ VGS = 10V 8.5 4. Gate 5, 6, 7, 8. Drain 30 33 @ VGS = 4.5V 8.5 48 @ VGS = 2.5V 5 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC

 9.2. Size:262K  sino
sm4403psk.pdf

SM4401PSK
SM4401PSK

SM4403PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD -40V/-11A,RDS(ON)= 18m (max.) @ VGS=-10VSRDS(ON)= 27m (max.) @ VGS=-4.5VSS Reliable and RuggedGTop View of SOP-8 Lead Free and Green Devices Available(RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G Power Management in LCD TV Inverter.S S S(1, 2, 3)P-Channel MOSFETOr

 9.3. Size:793K  globaltech semi
gsm4403.pdf

SM4401PSK
SM4401PSK

GSM4403 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-8A,RDS(ON)=34m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m@VGS=-1.8V Super high density cell design for extremely These devices are par

 9.4. Size:183K  silicon standard
ssm4409gem.pdf

SM4401PSK
SM4401PSK

SSM4409GEMP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DDDBVDSS -35VSimple Drive Requirement DRDS(ON) 7.5mLow On-resistance GFast Switching Characteristic ID -14.5ASSSRoHS Compliant SO-8DESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard Corp. Gprovide the designer with the best combination of fast switching, ruggedized devic

 9.5. Size:526K  silicon standard
ssm4407gm.pdf

SM4401PSK
SM4401PSK

SSM4407GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM4407GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 14mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -10.7AD The SSM4407GM is supplied in a RoHS-compliantPb-free; RoHS

 9.6. Size:841K  huashuo
hsm4407.pdf

SM4401PSK
SM4401PSK

HSM4407 P-Ch 30V Fast Switching MOSFETs General Description Product Summary The HSM4407 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 15 m gate charge for most of the synchronous buck converter applications. ID -11.5 A The HSM4407 meet the RoHS and Green Product requirement 100% EAS guaranteed with full functio

 9.7. Size:774K  cn sps
sm4405prl.pdf

SM4401PSK
SM4401PSK

SM4405PRL-30V /-6A Single P Power MOSFET C P03C P -30V /-6A Single P Power MOSFET 6P03CGeneral Description -30 VV DS-30V /-6A Single P Power MOSFET 59.5 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 93.5 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant -6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Teste

 9.8. Size:742K  cn sps
sm4404bprl.pdf

SM4401PSK
SM4401PSK

SM4404BPRL30V /10A Complementary NP Power MOSFET C N03C N 30V /10A Complementary NP Power MOSFET 9N03CGeneral Description 30 VV DS30V /10A Complementary NP Power MOSFET 14.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 18.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 10 AIDTape and reelPart ID Package Type Markinginfomation100% UIS

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