SM4501PSK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SM4501PSK
Маркировка: 4501
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 3.1 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 12.2 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 22 nC
Время нарастания (tr): 14 ns
Выходная емкость (Cd): 388 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.014 Ohm
Тип корпуса: SOP8
SM4501PSK Datasheet (PDF)
sm4501psk.pdf
SM4501PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD -20V/-12.2A,DRDS(ON) = 14m (max.) @ VGS =-4.5VRDS(ON) = 20m (max.) @ VGS =-2.5VSSRDS(ON) = 32m (max.) @ VGS =-1.8VSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)D D D D(4)ApplicationsG Power Management in Notebook Compu
ssm4501gm.pdf
SSM4501GMN AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2Simple Drive Requirement D2RDS(ON) 28mD1Low On-resistance D1ID 7AFast Switching G2P-CH BVDSS -30VS2G1SO-8RDS(ON) 50mS1DESCRIPTION ID -5.3AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,
ssm4501gsd.pdf
SSM4501GSDN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2D2D1RDS(ON) 27mSimple Drive Requirement D1Low On-resistance ID 7AFast Switching Characteristic P-CH BVDSS -30VG2S2RDS(ON) 49mPDIP-8G1S1DESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of
sm4508nhkp.pdf
SM4508NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/48A,DDD RDS(ON)=6.8m (Max.) @ VGS=10V D RDS(ON)=11m (Max.) @ VGS=4.5V Lower Qg and Qgd for high-speed switchingGPin 1SSS Lower RDS(ON) to Minimize Conduction LossesDFN5x6A-8_EP 100% UIS + Rg Tested(5,6,7,8) ESD protectionDDDD Reliable and Rugged Lead Free and Green Devices Av
sm4503nhkp.pdf
SM4503NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/80A,DDD RDS(ON)= 3m (Max.) @ VGS=10VD RDS(ON)= 5.1m (Max.) @ VGS=4.5V Reliable and RuggedGPin 1SSS Lower Qg and Qgd for high-speed switchingDFN5x6-8 Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) Lead Free and Green Devices AvailableDDDD(RoHS Compliant)Applic
sm4506nhkp.pdf
SM4506NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/67A,DDD RDS(ON)=4.8m (Max.) @ VGS=10V D RDS(ON)=7.6m (Max.) @ VGS=4.5V Reliable and RuggedGPin 1SSS Lower Qg and Qgd for high-speed switchingDFN5x6-8 Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) Lead Free and Green Devices AvailableDDDD(RoHS Compliant) ESD pr
sm4507nhkp.pdf
SM4507NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,DDD RDS(ON)= 5.5m (Max.) @ VGS=10V D RDS(ON)= 8.7m (Max.) @ VGS=4.5V Reliable and RuggedGPin 1SSS Lower Qg and Qgd for high-speed switchingDFN5x6-8 Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) Lead Free and Green Devices AvailableDDDD(RoHS Compliant) ESD
sm4500nhkp.pdf
SM4500NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/100A,DDD RDS(ON)=1.1m (Max.) @ VGS=10VD RDS(ON)=1.7m (Max.) @ VGS=4.5V 100% UIS + Rg TestedGPin 1SSS Reliable and RuggedDFN5x6A-8_EP Lower Qg and Qgd for high-speed switching(5,6,7,8) Lower RDS(ON) to Minimize Conduction LossesDDDD Lead Free and Green Devices Available(RoHS
sm4502nhkp.pdf
SM4502NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/100A,DDD RDS(ON)= 2m (Max.) @ VGS=10VD RDS(ON)= 3.2m (Max.) @ VGS=4.5V Reliable and RuggedGPin 1SSS Lower Qg and Qgd for high-speed switchingDFN5x6-8 Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) Lead Free and Green Devices AvailableDDDD (RoHS Compliant) 100
sm4504nhkp.pdf
SM4504NHKP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A,DDD RDS(ON)=4m (Max.) @ VGS=10VD RDS(ON)=6.2m (Max.) @ VGS=4.5V Reliable and RuggedGPin 1SSS Lower Qg and Qgd for high-speed switchingDFN5x6-8 Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) Lead Free and Green Devices AvailableDDDD(RoHS Compliant)Applications(4)
ssm4500gm.pdf
SSM4500GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 20VD2D2Simple Drive Requirement RDS(ON) 30mD1D1Low On-resistance ID 6AFast SwitchingG2P-CH BVDSS -20VS2G1SO-8S1RDS(ON) 50mDESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, rug
ssm4502gm.pdf
SSM4502GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS 20VD2Simple Drive Requirement D1 RDS(ON) 18mD1Low Gate ChargeID 8.3AFast Switching Performance G2S2P-CH BVDSS -20VG1S1SO-8RDS(ON) 45mDESCRIPTION ID -5AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switchin
ssm4509m.pdf
SSM4509GMN- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETSN-CH BVDSS 30VSimple drive requirement D2D2D2 RDS(ON) 14mLow on-resistance D1D1D1D1ID 10AFast switching characteristicG2G2P-CH BVDSS -30VS2S2 G1SO-8 S1G1RDS(ON) 20mS1 DescriptionID -8.4AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer with the best combination
ssm4507gm.pdf
SSM4507GMN AND P-CHANNEL ENHANCEMENTMODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30VD2D2Simple Drive Requirement D2RDS(ON) 36mD2D1D1Low On-resistance D1D1ID 6.0AFast Switching Performance G2G2 P-CH BVDSS -30VS2G1 S2SO-8 S1 G1 RDS(ON) 72mSO-8 S1DESCRIPTION ID -4.2AThe advanced power MOSFETs from Silicon Standard Corp. provide the designer w
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