IRF7601 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7601
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.8 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 0.7(min) V
Максимально допустимый постоянный ток стока |Id|: 5.7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 14 nC
Время нарастания (tr): 47 ns
Выходная емкость (Cd): 300 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.035 Ohm
Тип корпуса: SO8
IRF7601 Datasheet (PDF)
irf7601.pdf
PD - 9.1261DIRF7601HEXFET Power MOSFET Generation V TechnologyAA Ultra Low On-Resistance1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package3 6 Low Profile (
irf7601pbf.pdf
PD - 95244IRF7601PbF Lead-Freewww.irf.com 15/13/04IRF7601PbF2 www.irf.comIRF7601PbFwww.irf.com 3IRF7601PbF4 www.irf.comIRF7601PbFwww.irf.com 5IRF7601PbF6 www.irf.comIRF7601PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7601pbf.pdf
PD - 95244IRF7601PbF Lead-Freewww.irf.com 15/13/04IRF7601PbF2 www.irf.comIRF7601PbFwww.irf.com 3IRF7601PbF4 www.irf.comIRF7601PbFwww.irf.com 5IRF7601PbF6 www.irf.comIRF7601PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7603pbf.pdf
PD- 95347IRF7603PbF Lead-Freewww.irf.com 102/22/05IRF7603PbF2 www.irf.comIRF7603PbFwww.irf.com 3IRF7603PbF4 www.irf.comIRF7603PbFwww.irf.com 5IRF7603PbF6 www.irf.comIRF7603PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7603.pdf
PD - 9.1262DIRF7603HEXFET Power MOSFET Generation V TechnologyAA1 8 Ultra Low On-ResistanceS D N-Channel MOSFET VDSS = 30V2 7S D Very Small SOIC Package3 6S D Low Profile (
irf7606pbf.pdf
PD - 95245IRF7606PbFHEXFET Power MOSFETl Generation V TechnologyA1 8l Ultra Low On-ResistanceS Dl P-Channel MOSFET2 7 VDSS = -30VS Dl Very Small SOIC Package3 6S Dl Low Profile (
irf7604.pdf
PD - 9.1263EIRF7604HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel MOSFETVDSS = -20V2 7S D Very Small SOIC Package3 6S D Low Profile (
irf7607.pdf
PD - 93845PROVISIONALIRF7607HEXFET Power MOSFET Trench TechnologyAA1 8 Ultra Low On-ResistanceS DVDSS = 20V N-Channel MOSFET2 7S D Very Small SOIC Package3 6S D Low Profile (
irf7606.pdf
PD - 9.1264CIRF7606HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel MOSFET2 7 VDSS = -30VS D Very Small SOIC Package3 6S D Low Profile (
irf7607pbf.pdf
PD - 95698IRF7607PbFHEXFET Power MOSFETl Trench TechnologyAA1 8l Ultra Low On-ResistanceS DVDSS = 20Vl N-Channel MOSFET2 7S Dl Very Small SOIC Package3 6S Dl Low Profile (
irf7607pbf.pdf
PD - 95698IRF7607PbFHEXFET Power MOSFETl Trench TechnologyAA1 8l Ultra Low On-ResistanceS DVDSS = 20Vl N-Channel MOSFET2 7S Dl Very Small SOIC Package3 6S Dl Low Profile (
Другие MOSFET... NCEP85T25T , NCEP85T35T , IRF750A , IRF7521D1 , IRF7523D1 , IRF7524D1 , IRF7526D1 , IRF7555 , IRF2807 , IRF7603 , IRF7604 , IRF7606 , IRF7663 , IRF7805 , IRF7807 , IRF7809 , IRF7811 .
History: BS108
History: BS108
Список транзисторов
Обновления
MOSFET: 2SK2049 | MT6JN009A | MT6JN008A | MT40N20A | MT28N20A | MT20N024A | MT06N020AL | MT06N020A | MT06N005A | MT04N005AL | MT04N004B | MT03N03FAL | MS65R620RR | MS65R620RF | MS65R600R | MS65R600F