IRF7606 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7606
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 300 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: SO8
IRF7606 Datasheet (PDF)
irf7606pbf.pdf
PD - 95245IRF7606PbFHEXFET Power MOSFETl Generation V TechnologyA1 8l Ultra Low On-ResistanceS Dl P-Channel MOSFET2 7 VDSS = -30VS Dl Very Small SOIC Package3 6S Dl Low Profile (
irf7606.pdf
PD - 9.1264CIRF7606HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel MOSFET2 7 VDSS = -30VS D Very Small SOIC Package3 6S D Low Profile (
irf7603pbf.pdf
PD- 95347IRF7603PbF Lead-Freewww.irf.com 102/22/05IRF7603PbF2 www.irf.comIRF7603PbFwww.irf.com 3IRF7603PbF4 www.irf.comIRF7603PbFwww.irf.com 5IRF7603PbF6 www.irf.comIRF7603PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7601.pdf
PD - 9.1261DIRF7601HEXFET Power MOSFET Generation V TechnologyAA Ultra Low On-Resistance1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package3 6 Low Profile (
irf7603.pdf
PD - 9.1262DIRF7603HEXFET Power MOSFET Generation V TechnologyAA1 8 Ultra Low On-ResistanceS D N-Channel MOSFET VDSS = 30V2 7S D Very Small SOIC Package3 6S D Low Profile (
irf7604.pdf
PD - 9.1263EIRF7604HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel MOSFETVDSS = -20V2 7S D Very Small SOIC Package3 6S D Low Profile (
irf7607.pdf
PD - 93845PROVISIONALIRF7607HEXFET Power MOSFET Trench TechnologyAA1 8 Ultra Low On-ResistanceS DVDSS = 20V N-Channel MOSFET2 7S D Very Small SOIC Package3 6S D Low Profile (
irf7601pbf.pdf
PD - 95244IRF7601PbF Lead-Freewww.irf.com 15/13/04IRF7601PbF2 www.irf.comIRF7601PbFwww.irf.com 3IRF7601PbF4 www.irf.comIRF7601PbFwww.irf.com 5IRF7601PbF6 www.irf.comIRF7601PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7607pbf.pdf
PD - 95698IRF7607PbFHEXFET Power MOSFETl Trench TechnologyAA1 8l Ultra Low On-ResistanceS DVDSS = 20Vl N-Channel MOSFET2 7S Dl Very Small SOIC Package3 6S Dl Low Profile (
irf7601pbf.pdf
PD - 95244IRF7601PbF Lead-Freewww.irf.com 15/13/04IRF7601PbF2 www.irf.comIRF7601PbFwww.irf.com 3IRF7601PbF4 www.irf.comIRF7601PbFwww.irf.com 5IRF7601PbF6 www.irf.comIRF7601PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7607pbf.pdf
PD - 95698IRF7607PbFHEXFET Power MOSFETl Trench TechnologyAA1 8l Ultra Low On-ResistanceS DVDSS = 20Vl N-Channel MOSFET2 7S Dl Very Small SOIC Package3 6S Dl Low Profile (
Другие MOSFET... IRF7521D1 , IRF7523D1 , IRF7524D1 , IRF7526D1 , IRF7555 , IRF7601 , IRF7603 , IRF7604 , AON7410 , IRF7663 , IRF7805 , IRF7807 , IRF7809 , IRF7811 , IRF820 , IRF820A , IRF820AL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918