SM2621PSC P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionS -30V/-5.1A ,DDGRDS(ON)= 54m (Max.) @ VGS=-10VDRDS(ON)= 65m (Max.) @ VGS=-4.5VD RDS(ON)= 92m (Max.) @ VGS=-2.5VTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)(RoHS Compliant)DD DDApplications(3)G Power Management in Notebook Comput

TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(m) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM

SM2610NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/6.6A,SDRDS(ON)= 21m(max.) @ VGS=10VDGRDS(ON)= 27m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DD DDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredSys

SM2612NSCN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.5A,SDRDS(ON)= 26.5m(max.) @ VGS=10VDGRDS(ON)= 35m(max.) @ VGS=4.5VDD Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-6(RoHS Compliant)(1,2,5,6)DDDDApplications Power Management in Notebook Computer,(3)GPortable Equipment and Battery PoweredSy

SM2613PSC P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-5.6A ,SDRDS(ON)= 45m (Max.) @ VGS=-4.5VDGRDS(ON)= 66m (Max.) @ VGS=-2.5VDDRDS(ON)=104m (Max.) @ VGS=-1.8V 100% UIS + Rg TestedTop View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6)DD DD(RoHS Compliant)Applications(3)G Power Management in Noteb