Справочник MOSFET. IRF7805

 

IRF7805 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF7805
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: SO8

 Аналог (замена) для IRF7805

 

 

IRF7805 Datasheet (PDF)

 ..1. Size:236K  international rectifier
irf7805 irf7805a.pdf

IRF7805 IRF7805

PD 91746CIRF7805/IRF7805AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8Top Viewbalance of on-resistan

 ..2. Size:236K  international rectifier
irf7805.pdf

IRF7805 IRF7805

PD 91746CIRF7805/IRF7805AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8Top Viewbalance of on-resistan

 ..3. Size:330K  infineon
irf7805pbf.pdf

IRF7805 IRF7805

IRF7805PbF HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A A1 8S D Ideal for Mobile DC-DC Converters 2 7S D Low Conduction Losses 3 6S D Low Switching Losses 4 5G D Lead-Free SO-8 Top ViewIRF7805PbF Description Devices Features This new device employs advanced HEXFET Power IRF7805PbF MOSFET technology to

 0.1. Size:270K  international rectifier
irf7805z.pdf

IRF7805 IRF7805

PD - 94635BIRF7805ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m:@VGS = 10V30V 18nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Curr

 0.2. Size:203K  international rectifier
auirf7805q.pdf

IRF7805 IRF7805

PD 96367BAUIRF7805QFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceAAV(BR)DSS 30V1l Logic Level 8S Dl N Channel MOSFET2 7S DRDS(on) typ.9.2ml Surface Mount3 6S Dl Available in Tape & Reel4 5 max. 11ml 150C Operating Temperature G Dl Automotive [Q101] QualifiedTop View ID 13Al Lead-Free, RoHS CompliantD

 0.3. Size:232K  international rectifier
irf7805q.pdf

IRF7805 IRF7805

PD 96114IRF7805QPbFl Advanced Process Technologyl Ultra Low On-Resistancel N Channel MOSFETl Surface MountA1 8l Available in Tape & Reel S Dl 150C Operating Temperature2 7S Dl Automotive [Q101] Qualified3 6S Dl Lead-Free4 5G DDescriptionSO-8Top ViewSpecifically designed for Automotive applications, theseHEXFET Power MOSFET's in package utilize

 0.4. Size:289K  international rectifier
irf7805zgpbf.pdf

IRF7805 IRF7805

PD - 96253IRF7805ZGPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m @VGS = 10V30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems.Al Lead-FreeA1 8S Dl Halogen-Free2 7S D3 6BenefitsS Dl Very Low RDS(on) at 4.5V VGS 4 5G Dl Ultra-Low Gate ImpedanceSO-8Top Viewl

 0.5. Size:270K  infineon
irf7805zpbf.pdf

IRF7805 IRF7805

PD - 96011AIRF7805ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m @VGS = 10V30V 18nCSynchronous Buck Converter forApplications in Networking &Computing Systems.Al Lead-FreeA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Vol

 0.6. Size:2271K  kexin
irf7805z.pdf

IRF7805 IRF7805

SMD Type MOSFETN-Channel Enhancement MOSFETIRF7805Z (KRF7805Z) FeaturesSOP-8 VDS (V) = 30V ID = 16 A (VGS = 10V) RDS(ON) 6.8m (VGS = 10V)A HEXFET Power MOSFET A1 81.50 0.15S D2 7S D3 6S D4 5G D Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS20 TA

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