Справочник MOSFET. IRF820A

 

IRF820A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF820A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 49 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IRF820A

 

 

IRF820A Datasheet (PDF)

 ..1. Size:196K  international rectifier
 irf820a.pdf

IRF820A IRF820A

PD - 94978SMPS MOSFETIRF820APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 500V 3.0 2.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche

 ..2. Size:917K  samsung
 irf820a.pdf

IRF820A IRF820A

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 ..3. Size:204K  vishay
 irf820a sihf820a.pdf

IRF820A IRF820A

IRF820A, SiHF820AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTQg (Max.) (nC) 17 RuggednessQgs (nC) 4.3 Fully Characterized Capacitance and Avalanche Voltageand currentQgd (nC) 8.5 Effecti

 0.1. Size:133K  international rectifier
 irf820as.pdf

IRF820A IRF820A

PD- 93774AIRF820ASSMPS MOSFET IRF820ALHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 3.0 2.5A High speed power switchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andTO-262D2PakAval

 0.2. Size:291K  international rectifier
 irf820aspbf irf820alpbf.pdf

IRF820A IRF820A

PD - 95533IRF820ASPbFSMPS MOSFET IRF820ALPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 500V 3.0 2.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg Results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance

 0.3. Size:133K  international rectifier
 irf820al.pdf

IRF820A IRF820A

PD- 93774AIRF820ASSMPS MOSFET IRF820ALHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 3.0 2.5A High speed power switchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andTO-262D2PakAval

 0.4. Size:204K  vishay
 irf820aspbf sihf820al sihf820as.pdf

IRF820A IRF820A

IRF820AS, SiHF820AS, IRF820AL, SiHF820ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 4.3RuggednessQgd (nC) 8.5 Fully Characterize

Другие MOSFET... IRF7604 , IRF7606 , IRF7663 , IRF7805 , IRF7807 , IRF7809 , IRF7811 , IRF820 , IRFZ24N , IRF820AL , IRF820AS , IRF820FI , IRF820S , IRF821 , IRF822 , IRF822FI , IRF823 .

 

 
Back to Top