Справочник MOSFET. 2SK3435-S

 

2SK3435-S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3435-S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 84 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 60 nC
   trⓘ - Время нарастания: 1200 ns
   Cossⓘ - Выходная емкость: 520 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: TO262

 Аналог (замена) для 2SK3435-S

 

 

2SK3435-S Datasheet (PDF)

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isc N-Channel MOSFET Transistor 2SK3435-SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.1. Size:206K  renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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isc N-Channel MOSFET Transistor 2SK3435-ZFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3435SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3435 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3435 TO-220AB2SK3435-S TO-262FEATURES2SK3435-Z TO-220SMD Super low on-state resistance:RDS(on)1 = 14 m

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2SK3435-S 2SK3435-S

isc N-Channel MOSFET Transistor 2SK3435FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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