APM2014N - описание и поиск аналогов

APM2014N N-Channel Enhancement Mode MOSFET Features Pin Description 20V/30A , RDS(ON)=12m (typ.) @ VGS=4.5V RDS(ON)=18m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) 1 2 3 Reliable and Rugged TO-252 Package G D S Top View of TO-252 Applications Power Management in Comput

APM2054N N-Channel Enhancement Mode MOSFET Features Pin Description 20V/12A, RDS(ON)=35m (typ.) @ VGS=10V RDS(ON)=45m (typ.) @ VGS=4.5V RDS(ON)=110m (typ.) @ VGS=2.5V 1 2 3 1 2 3 Super High Dense Cell Design High Power and Current Handling Capability G D S G D S TO-252, SOT-89 and SOT-223 Packages To

APM2071PD P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4A, RDS(ON)=50m (typ.) @ VGS=-4.5V G RDS(ON)=75m (typ.) @ VGS=-2.5V D S Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged (2) Lead Free and Green Devices Available D (RoHS Compliant) Applications (1) G DC/DC Converters S (3) P-Channel MOSFET Ordering and Marki

APM2030N N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=35m (typ.) @ VGS=4.5V RDS(ON)=38m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) 1 2 3 Reliable and Rugged TO-252 Package G D S Top View of TO-252 Applications Power Management in Computer

APM2055NU N-Channel Enhancement Mode MOSFET Features Pin Description 20V/10A, D RDS(ON)=55m (Typ.) @ VGS=10V S RDS(ON)=75m (Typ.) @ VGS=4.5V G RDS(ON)=140m (Typ.) @ VGS=2.5V Super High Dense Cell Design Top View of TO-252 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Desktop Computer o

APM2054NDC www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis