APM2014N - Даташиты. Аналоги. Основные параметры

APM2014NN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/30A , RDS(ON)=12m(typ.) @ VGS=4.5V RDS(ON)=18m(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON)1 2 3 Reliable and Rugged TO-252 PackageG D S Top View of TO-252Applications Power Management in Comput

APM2054N N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/12A, RDS(ON)=35m(typ.) @ VGS=10VRDS(ON)=45m(typ.) @ VGS=4.5VRDS(ON)=110m(typ.) @ VGS=2.5V1 2 31 2 3 Super High Dense Cell Design High Power and Current Handling Capability G D SG D S TO-252, SOT-89 and SOT-223 Packages To

APM2071PD P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-4A, RDS(ON)=50m(typ.) @ VGS=-4.5VG RDS(ON)=75m(typ.) @ VGS=-2.5VDS Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged (2) Lead Free and Green Devices AvailableD (RoHS Compliant)Applications(1)G DC/DC ConvertersS(3)P-Channel MOSFETOrdering and Marki

APM2030NN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=35m(typ.) @ VGS=4.5VRDS(ON)=38m(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON)1 2 3 Reliable and Rugged TO-252 PackageG D S Top View of TO-252Applications Power Management in Computer

APM2055NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/10A,D RDS(ON)=55m (Typ.) @ VGS=10VS RDS(ON)=75m (Typ.) @ VGS=4.5VG RDS(ON)=140m (Typ.) @ VGS=2.5V Super High Dense Cell DesignTop View of TO-252 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Desktop Computer o

APM2054NDCwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis