FMH23N50E datasheet, аналоги, основные параметры
Наименование производителя: FMH23N50E 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 315 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 330 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.245 Ohm
Тип корпуса: TO3P
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Аналог (замена) для FMH23N50E
- подборⓘ MOSFET транзистора по параметрам
FMH23N50E даташит
fmh23n50e.pdf
FMH23N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)
fmh23n50e.pdf
isc N-Channel MOSFET Transistor FMH23N50E FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S
fmh23n50es.pdf
FMH23N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P (Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5
fmh23n60es.pdf
FMH23N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V
Другие IGBT... SI4340DY, SPB80N08S2L, SPP80N08S2L, STK630F, TSF8N60M, TSP8N60M, UTC50N06L, STK0460F, P60NF06, FMV23N50E, FMR23N50E, FQP630, SVF2N60M, SVF2N60F, SVF2N60T, SVF2N60D, 2SK641
History: PA606HAG | AP4563AGH | MSF20N50 | SI5481DU | AP1605 | MSW16N50 | WSR25N20
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