SVF2N60D - аналоги, параметры транзистора - Справочник транзисторов

..1. Size:692K silan
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SVF2N60M(MJ)(NF)(F)(D) 2A 600V N 2 SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 1 2 3 3 TO-126F-3L

..2. Size:600K silan
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..3. Size:519K silan
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SVF2N60M/MJ/N/NF/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode 1 3 TO-252-2L power MOS field effect transistor which is produced using Silan 1 proprietary F-CellTM structure VDMOS technology. The improved 3 1 process and cell structure have been especially tailored to minimize 2 3 1.Gate 2.Dra

..4. Size:624K silan
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SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

7.1. Size:362K silan
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7.2. Size:614K silan
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SVF2N60RD/M/MJ 2A 600V N 2 SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1 1 3 3

7.3. Size:682K silan
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SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

7.4. Size:360K silan
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