HFP45N06 - параметры транзистора MOSFET, его аналоги, datasheet

HFP45N06 Datasheet (PDF)

..1. Size:263K shantou-huashan
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N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP45N06 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~175 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc

9.1. Size:1566K vishay
irfp450lc sihfp450lc.pdf pdf_icon

IRFP450LC, SiHFP450LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 74 Reduced Ciss, Coss, CrssCOMPLIANTQgs (nC) 19 Isolated Central Mounting HoleQgd (nC) 35 Dynamic dV/dt RatedConfiguration

9.2. Size:302K vishay
irfp450a sihfp450a.pdf pdf_icon

IRFP450A, SiHFP450AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 64RuggednessCOMPLIANTQgs (nC) 16 Fully Characterized Capacitance andQgd (nC) 26Avalanche Voltage and CurrentConfigu

9.3. Size:1560K vishay
irfp450 sihfp450.pdf pdf_icon

IRFP450, SiHFP450Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 150COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Lead (P