Справочник MOSFET. HFP45N06

 

HFP45N06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HFP45N06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 131 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.028 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 125 nC
   trⓘ - Время нарастания: 74 ns
   Cossⓘ - Выходная емкость: 600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: TO220

 Аналог (замена) для HFP45N06

 

 

HFP45N06 Datasheet (PDF)

 ..1. Size:263K  shantou-huashan
hfp45n06.pdf

HFP45N06
HFP45N06

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP45N06 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~175 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc

 9.1. Size:1566K  vishay
irfp450lc sihfp450lc.pdf

HFP45N06
HFP45N06

IRFP450LC, SiHFP450LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 74 Reduced Ciss, Coss, CrssCOMPLIANTQgs (nC) 19 Isolated Central Mounting HoleQgd (nC) 35 Dynamic dV/dt RatedConfiguration

 9.2. Size:302K  vishay
irfp450a sihfp450a.pdf

HFP45N06
HFP45N06

IRFP450A, SiHFP450AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 64RuggednessCOMPLIANTQgs (nC) 16 Fully Characterized Capacitance andQgd (nC) 26Avalanche Voltage and CurrentConfigu

 9.3. Size:1560K  vishay
irfp450 sihfp450.pdf

HFP45N06
HFP45N06

IRFP450, SiHFP450Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 150COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Lead (P

 9.4. Size:1570K  infineon
irfp450lc sihfp450lc.pdf

HFP45N06
HFP45N06

IRFP450LC, SiHFP450LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 74 Reduced Ciss, Coss, CrssCOMPLIANTQgs (nC) 19 Isolated Central Mounting HoleQgd (nC) 35 Dynamic dV/dt RatedConfiguration

 9.5. Size:309K  infineon
irfp450a sihfp450a.pdf

HFP45N06
HFP45N06

IRFP450A, SiHFP450AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 64RuggednessCOMPLIANTQgs (nC) 16 Fully Characterized Capacitance andQgd (nC) 26Avalanche Voltage and CurrentConfigu

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top