IRF830A
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF830A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 74
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 5
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 24(max)
nC
trⓘ -
Время нарастания: 21
ns
Cossⓘ - Выходная емкость: 93
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4
Ohm
Тип корпуса:
TO220AB
Аналог (замена) для IRF830A
IRF830A
Datasheet (PDF)
..1. Size:108K international rectifier
irf830a.pdf 
PD- 91878CSMPS MOSFETIRF830AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40 5.0A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curren
..2. Size:168K international rectifier
irf830apbf.pdf 
PD- 94820SMPS MOSFETIRF830APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40 5.0A High speed power switching Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Volt
..3. Size:911K samsung
irf830a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
..4. Size:1091K vishay
irf830a sihf830a.pdf 
IRF830A, SiHF830AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.4RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24 COMPLIANTRuggednessQgs (nC) 6.3 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigurati
..5. Size:1093K vishay
irf830apbf sihf830a.pdf 
IRF830A, SiHF830AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.4RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24 COMPLIANTRuggednessQgs (nC) 6.3 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigurati
..6. Size:234K inchange semiconductor
irf830a.pdf 
INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF830AFEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch Mode Power SupplyUninterruptable Power SupplyHigh speed power switc
0.1. Size:155K international rectifier
irf830as.pdf 
PD- 92006ASMPS MOSFETIRF830AS/LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power SwitchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre
0.2. Size:155K international rectifier
irf830al.pdf 
PD- 92006ASMPS MOSFETIRF830AS/LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power SwitchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre
0.3. Size:676K international rectifier
irf830aspbf irf830alpbf.pdf 
PD- 95139SMPS MOSFETIRF830AS/LPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Lead-FreeBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Vol
0.4. Size:207K vishay
irf830alpbf irf830aspbf sihf830al sihf830as.pdf 
IRF830AS, IRF830AL, SiHF830AS, SiHF830ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 24RequirementQgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterize
0.5. Size:880K cn vbsemi
irf830astrl.pdf 
IRF830ASTRLwww.VBsemi.twN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHSRDS(on) max. at 25 C () VGS = 10 V 0.8643 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)22Qgd
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