AOD406N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD406 uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), shoot-through immunity and body diodeID = 85A (VGS = 10V)characteristics. This device is ideally suited for use as a lowRDS(ON)

AOD406www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLU

AOD408N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD408 uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON) and low gate charge. This device is ID = 18A (VGS = 10V)suitable for use as a load switch or in PWM applications. RDS(ON)

AOD409G60V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -60V Low RDS(ON) ID (at VGS=-10V) -28A Logic Level Driving RDS(ON) (at VGS=-10V)

AOD404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD404 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate chargeand lowID = 85A (VGS = 10V)gate resistance. This device is ideally suited for useRDS(ON)

AOD403/AOI40330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD403/AOI403 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70Aresistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V)

AOD402N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD402 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 18 A (VGS = 20V)charge. This device is suitable for use in PWM, laodRDS(ON)

AOD409/AOI40960V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology -60V Low RDS(ON) ID (at VGS=-10V) -26A Low Gate Charge RDS(ON) (at VGS=-10V)

AOD400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD400 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 10 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

AOD409/AOI409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD/I409 uses advanced trench technology to VDS (V) = -60Vprovide excellent RDS(ON), low gate charge and low ID = -26A (VGS = -10V)gate resistance. With the excellent thermal resistance RDS(ON)

AOD403/AOI40330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD403/AOI403 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70Aresistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V)

AOD407P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD407 uses advanced trench technology to VDS (V) = -60Vprovide excellent RDS(ON), low gate charge and low ID = -12A (VGS = -10V)gate resistance. With the excellent thermal resistance RDS(ON)

AOD408www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLUT

AOD400www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLUT

AOD403www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.009 at VGS = - 10 V 80RoHS*- 30COMPLIANT0.012 at VGS = - 4.5 V 80STO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitGat

AOD407www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol

isc P-Channel MOSFET Transistor AOD409GFEATURESDrain Current I = -28A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

INCHANGE Semiconductorisc P-Channel MOSFET Transistor AOD409FEATURESWith TO-252( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RA

INCHANGE SemiconductorIsc P-Channel MOSFET Transistor AOD403FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(T =2

isc P-Channel MOSFET Transistor AOD407FEATURESDrain Current I =-12A@ T =25D CDrain Source Voltage-: V =-60V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose